高q光子器件中厚氮化硅薄膜在300 mm尺度下的性能评价

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Semiconductor Manufacturing Pub Date : 2025-06-27 DOI:10.1109/TSM.2025.3583925

Soumen Kar;Nicholas W. Gangi;Katrina A. Morgan;Lewis G. Carpenter;Nicholas M. Fahrenkopf;Yukta Timalsina;Christopher V. Baiocco;David Harame

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引用次数: 0

摘要

这项工作评估厚氮化硅（SiN）薄膜性能使用各种在线和离线先进的计量数据分析。用于光子应用的厚SiN薄膜通常是通过等离子体增强化学气相沉积（PECVD）和低压化学气相沉积（LPCVD）技术制备的。我们目前的研究结合了高容量在线和高精度离线计量，以最好地表征我们的厚SiN薄膜。利用在线x射线光电子能谱（XPS）对SiN薄膜进行了成分分析，得到了薄膜表面成分和污染的快速反馈。最后，我们比较了退火和未退火的PECVD/LPCVD晶圆的折射率(n)。

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Evaluation of Thick Silicon Nitride Film Properties at 300 mm Scale for High-Q Photonic Devices

This work evaluates thick silicon nitride (SiN) film properties using various inline and offline advanced metrology data analysis. The thick SiN films for photonic applications are typically prepared by plasma-enhanced chemical vapor deposition (PECVD) and low-pressure chemical vapor deposition (LPCVD) techniques. Our present study combines high-volume inline and high-accuracy offline metrology to best characterize our thick SiN films. The developed SiN film compositional analysis has been carried out using inline X-ray photoelectron spectroscopy (XPS) to get fast feedback on the composition and contamination of the film surface. Finally, we present a refractive index (n) comparison for annealed and unannealed PECVD/LPCVD wafers.

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来源期刊

IEEE Transactions on Semiconductor Manufacturing 工程技术-工程：电子与电气

CiteScore

5.20

自引率

11.10%

发文量

101

审稿时长

3.3 months

期刊介绍： The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.