{"title":"通过掺杂扶手椅石墨烯纳米带对NO2传感的分子洞察","authors":"Kamal Solanki , Ayush Kumar Pandit , Manoj Kumar Majumder (Senior Member, IEEE)","doi":"10.1016/j.mssp.2025.109976","DOIUrl":null,"url":null,"abstract":"<div><div>An escalating concern from the Nitrogen dioxide (NO<sub>2</sub>) molecules induces respiratory issues, necessitating the development of highly sensitive sensors. In response to this pressing issue, the research proposed a novel methodology leveraging hydrogen (<em>H</em>) passivated armchair graphene nanoribbons (ArGNR). These nanoribbons are successively substituted with reactive non-metal phosphorus (<em>P</em>) and post-transition metals (aluminum (<em>Al</em>) and gallium (<em>Ga</em>)) to enhance the sensitivity of the ArGNR to the NO<sub>2</sub> molecules. The introduction of this dopant increases the density of adsorption sites, leading to a higher interaction with the NO<sub>2</sub> molecule. Moreover, to ensure accuracy, the electronic properties are rigorously examined through the density functional theory (DFT) with spin polarization and unpolarization calculation, within the linear combination of atomic orbitals (LCAO) framework. Initially, the investigation focuses on a width-3 ArGNR, substituted with <em>P</em> at all the carbon (<em>C</em>) sites, and identifies an optimal site for the dopant incorporation. Subsequently, the <em>Al</em> and <em>Ga</em> substitution at these sites results in a notable 10–20 % increase in adsorption energy (<em>E</em><sub><em>ads</em></sub>) compared to the <em>P</em>-doped ArGNR. In addition, the research extended to the wider ArGNR (widths of 4 and 5 <em>C</em> atoms), where the introduction of dopants further influences the electronic properties. The results demonstrate that the <em>Al</em>-doped width-3 ArGNR exhibits optimal <em>E</em><sub><em>ads</em></sub> and increased desorption (<em>r</em><sub><em>des</em></sub>) of −3.32 eV and 0.17 eV, following NO<sub>2</sub> adsorption, respectively. The band gap (<em>E</em><sub><em>G</em></sub>) also delineates a decrement of 42.5 % post-adsorption, signifying a high sensitivity. Furthermore, it is discerned that <em>Al</em> manifests as a promising dopant in ArGNR for sensing.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"200 ","pages":"Article 109976"},"PeriodicalIF":4.6000,"publicationDate":"2025-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Molecular insights into NO2 sensing through doped armchair graphene nanoribbon\",\"authors\":\"Kamal Solanki , Ayush Kumar Pandit , Manoj Kumar Majumder (Senior Member, IEEE)\",\"doi\":\"10.1016/j.mssp.2025.109976\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>An escalating concern from the Nitrogen dioxide (NO<sub>2</sub>) molecules induces respiratory issues, necessitating the development of highly sensitive sensors. In response to this pressing issue, the research proposed a novel methodology leveraging hydrogen (<em>H</em>) passivated armchair graphene nanoribbons (ArGNR). These nanoribbons are successively substituted with reactive non-metal phosphorus (<em>P</em>) and post-transition metals (aluminum (<em>Al</em>) and gallium (<em>Ga</em>)) to enhance the sensitivity of the ArGNR to the NO<sub>2</sub> molecules. The introduction of this dopant increases the density of adsorption sites, leading to a higher interaction with the NO<sub>2</sub> molecule. Moreover, to ensure accuracy, the electronic properties are rigorously examined through the density functional theory (DFT) with spin polarization and unpolarization calculation, within the linear combination of atomic orbitals (LCAO) framework. Initially, the investigation focuses on a width-3 ArGNR, substituted with <em>P</em> at all the carbon (<em>C</em>) sites, and identifies an optimal site for the dopant incorporation. Subsequently, the <em>Al</em> and <em>Ga</em> substitution at these sites results in a notable 10–20 % increase in adsorption energy (<em>E</em><sub><em>ads</em></sub>) compared to the <em>P</em>-doped ArGNR. In addition, the research extended to the wider ArGNR (widths of 4 and 5 <em>C</em> atoms), where the introduction of dopants further influences the electronic properties. The results demonstrate that the <em>Al</em>-doped width-3 ArGNR exhibits optimal <em>E</em><sub><em>ads</em></sub> and increased desorption (<em>r</em><sub><em>des</em></sub>) of −3.32 eV and 0.17 eV, following NO<sub>2</sub> adsorption, respectively. The band gap (<em>E</em><sub><em>G</em></sub>) also delineates a decrement of 42.5 % post-adsorption, signifying a high sensitivity. Furthermore, it is discerned that <em>Al</em> manifests as a promising dopant in ArGNR for sensing.</div></div>\",\"PeriodicalId\":18240,\"journal\":{\"name\":\"Materials Science in Semiconductor Processing\",\"volume\":\"200 \",\"pages\":\"Article 109976\"},\"PeriodicalIF\":4.6000,\"publicationDate\":\"2025-08-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science in Semiconductor Processing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1369800125007139\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125007139","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Molecular insights into NO2 sensing through doped armchair graphene nanoribbon
An escalating concern from the Nitrogen dioxide (NO2) molecules induces respiratory issues, necessitating the development of highly sensitive sensors. In response to this pressing issue, the research proposed a novel methodology leveraging hydrogen (H) passivated armchair graphene nanoribbons (ArGNR). These nanoribbons are successively substituted with reactive non-metal phosphorus (P) and post-transition metals (aluminum (Al) and gallium (Ga)) to enhance the sensitivity of the ArGNR to the NO2 molecules. The introduction of this dopant increases the density of adsorption sites, leading to a higher interaction with the NO2 molecule. Moreover, to ensure accuracy, the electronic properties are rigorously examined through the density functional theory (DFT) with spin polarization and unpolarization calculation, within the linear combination of atomic orbitals (LCAO) framework. Initially, the investigation focuses on a width-3 ArGNR, substituted with P at all the carbon (C) sites, and identifies an optimal site for the dopant incorporation. Subsequently, the Al and Ga substitution at these sites results in a notable 10–20 % increase in adsorption energy (Eads) compared to the P-doped ArGNR. In addition, the research extended to the wider ArGNR (widths of 4 and 5 C atoms), where the introduction of dopants further influences the electronic properties. The results demonstrate that the Al-doped width-3 ArGNR exhibits optimal Eads and increased desorption (rdes) of −3.32 eV and 0.17 eV, following NO2 adsorption, respectively. The band gap (EG) also delineates a decrement of 42.5 % post-adsorption, signifying a high sensitivity. Furthermore, it is discerned that Al manifests as a promising dopant in ArGNR for sensing.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
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Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.