通过脉冲激光熔化增强厚度、面积和分割的无锂超纯锗探测器

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
S. Bertoldo , C. Carraro , G. Maggioni , W. Raniero , F. Sgarbossa , F. Nicolasi , D.R. Napoli , E. Napolitani , D. De Salvador
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引用次数: 0

摘要

在这项工作中,我们提出了一种创新技术的优化过程,以创建薄的、热稳定的、可分割的n型结,用于制造分段超纯锗(HPGe)探测器。该方法的核心是通过磁控溅射沉积掺杂原子,并使用脉冲激光熔化(PLM)技术将其扩散到锗中。PLM使薄锗层快速熔化,允许在随后的外延再生过程中替代掺杂剂的掺入。在以前的工作中,我们已经成功地使用这种技术在小型探测器上制造结。在这里,我们将该技术的应用扩展到更大面积,分段和厚探测器。最初,我们开发了一个具有六个部分的薄原型探测器,证明了PLM结的可行性。光谱测量显示了良好的能量分辨率和伽玛射线位置识别能力。至关重要的是,该结在退火后证明了热稳定性,通常用于中子损伤恢复。然后,我们将该技术扩展到厚至2厘米的探测器,由于结薄和陡度,需要优化每个工艺步骤。改进包括减少灰尘,化学表面清洁,无金光刻,化学机械抛光,以及使用金属涂层聚合物片减少接触压力。经过优化的工艺得到了击穿电压显著高于耗尽电压的探测器原型,使其能够有效地用作伽马辐射探测器。这项技术为下一代分段HPGe探测器铺平了道路,该探测器具有精确的事件定位,增强了成像和跟踪能力,可用于核物理、医学诊断、国土安全和空间研究。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Lithium-free hyperpure germanium detectors with enhanced thickness, area, and segmentation via pulsed laser melting
In this work, we present the optimization process of an innovative technology to create a thin, thermally stable, and segmentable n-type junction for the fabrication of segmented hyperpure germanium (HPGe) detectors. The core of this approach involves depositing doping atoms through magnetron sputtering and diffusing them into germanium using the Pulsed Laser Melting (PLM) technique. PLM enables rapid melting of a thin germanium layer, allowing substitutional incorporation of dopants during the subsequent epitaxial regrowth. In previous works, we have successfully used this technology for producing junctions on small-sized detectors. Here, we extend the application of the technology to larger-area, segmented, and thick detectors. Initially, we developed a thin prototype detector featuring six segments, demonstrating the feasibility of the PLM junction. Spectroscopic measurements revealed good energy resolution and the capability for gamma-ray position identification. Crucially, the junction proved thermally stable after annealing typically used for neutron damage recovery. We then extended this technology to thicker detectors up to 2 cm, requiring optimization of each process step due to the junction thinness and abruptness. Improvements included dust reduction, chemical surface cleaning, gold-free photolithography, chemical-mechanical polishing, and contact pressure reduction using metal-coated polymer sheets. The optimized process yielded a detector prototype with breakdown voltage significantly higher than the depletion voltage, enabling its effective use as gamma radiation detector. This technology paves the way for next-generation segmented HPGe detectors with precise event localization, enhancing imaging and tracking capabilities for applications in nuclear physics, medical diagnostics, homeland security, and space research.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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