S. Bertoldo , C. Carraro , G. Maggioni , W. Raniero , F. Sgarbossa , F. Nicolasi , D.R. Napoli , E. Napolitani , D. De Salvador
{"title":"通过脉冲激光熔化增强厚度、面积和分割的无锂超纯锗探测器","authors":"S. Bertoldo , C. Carraro , G. Maggioni , W. Raniero , F. Sgarbossa , F. Nicolasi , D.R. Napoli , E. Napolitani , D. De Salvador","doi":"10.1016/j.mssp.2025.109967","DOIUrl":null,"url":null,"abstract":"<div><div>In this work, we present the optimization process of an innovative technology to create a thin, thermally stable, and segmentable n-type junction for the fabrication of segmented hyperpure germanium (HPGe) detectors. The core of this approach involves depositing doping atoms through magnetron sputtering and diffusing them into germanium using the Pulsed Laser Melting (PLM) technique. PLM enables rapid melting of a thin germanium layer, allowing substitutional incorporation of dopants during the subsequent epitaxial regrowth. In previous works, we have successfully used this technology for producing junctions on small-sized detectors. Here, we extend the application of the technology to larger-area, segmented, and thick detectors. Initially, we developed a thin prototype detector featuring six segments, demonstrating the feasibility of the PLM junction. Spectroscopic measurements revealed good energy resolution and the capability for gamma-ray position identification. Crucially, the junction proved thermally stable after annealing typically used for neutron damage recovery. We then extended this technology to thicker detectors up to 2 cm, requiring optimization of each process step due to the junction thinness and abruptness. Improvements included dust reduction, chemical surface cleaning, gold-free photolithography, chemical-mechanical polishing, and contact pressure reduction using metal-coated polymer sheets. The optimized process yielded a detector prototype with breakdown voltage significantly higher than the depletion voltage, enabling its effective use as gamma radiation detector. This technology paves the way for next-generation segmented HPGe detectors with precise event localization, enhancing imaging and tracking capabilities for applications in nuclear physics, medical diagnostics, homeland security, and space research.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"200 ","pages":"Article 109967"},"PeriodicalIF":4.6000,"publicationDate":"2025-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Lithium-free hyperpure germanium detectors with enhanced thickness, area, and segmentation via pulsed laser melting\",\"authors\":\"S. Bertoldo , C. Carraro , G. Maggioni , W. Raniero , F. Sgarbossa , F. Nicolasi , D.R. Napoli , E. Napolitani , D. De Salvador\",\"doi\":\"10.1016/j.mssp.2025.109967\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>In this work, we present the optimization process of an innovative technology to create a thin, thermally stable, and segmentable n-type junction for the fabrication of segmented hyperpure germanium (HPGe) detectors. The core of this approach involves depositing doping atoms through magnetron sputtering and diffusing them into germanium using the Pulsed Laser Melting (PLM) technique. PLM enables rapid melting of a thin germanium layer, allowing substitutional incorporation of dopants during the subsequent epitaxial regrowth. In previous works, we have successfully used this technology for producing junctions on small-sized detectors. Here, we extend the application of the technology to larger-area, segmented, and thick detectors. Initially, we developed a thin prototype detector featuring six segments, demonstrating the feasibility of the PLM junction. Spectroscopic measurements revealed good energy resolution and the capability for gamma-ray position identification. Crucially, the junction proved thermally stable after annealing typically used for neutron damage recovery. We then extended this technology to thicker detectors up to 2 cm, requiring optimization of each process step due to the junction thinness and abruptness. Improvements included dust reduction, chemical surface cleaning, gold-free photolithography, chemical-mechanical polishing, and contact pressure reduction using metal-coated polymer sheets. The optimized process yielded a detector prototype with breakdown voltage significantly higher than the depletion voltage, enabling its effective use as gamma radiation detector. This technology paves the way for next-generation segmented HPGe detectors with precise event localization, enhancing imaging and tracking capabilities for applications in nuclear physics, medical diagnostics, homeland security, and space research.</div></div>\",\"PeriodicalId\":18240,\"journal\":{\"name\":\"Materials Science in Semiconductor Processing\",\"volume\":\"200 \",\"pages\":\"Article 109967\"},\"PeriodicalIF\":4.6000,\"publicationDate\":\"2025-08-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science in Semiconductor Processing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1369800125007048\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125007048","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Lithium-free hyperpure germanium detectors with enhanced thickness, area, and segmentation via pulsed laser melting
In this work, we present the optimization process of an innovative technology to create a thin, thermally stable, and segmentable n-type junction for the fabrication of segmented hyperpure germanium (HPGe) detectors. The core of this approach involves depositing doping atoms through magnetron sputtering and diffusing them into germanium using the Pulsed Laser Melting (PLM) technique. PLM enables rapid melting of a thin germanium layer, allowing substitutional incorporation of dopants during the subsequent epitaxial regrowth. In previous works, we have successfully used this technology for producing junctions on small-sized detectors. Here, we extend the application of the technology to larger-area, segmented, and thick detectors. Initially, we developed a thin prototype detector featuring six segments, demonstrating the feasibility of the PLM junction. Spectroscopic measurements revealed good energy resolution and the capability for gamma-ray position identification. Crucially, the junction proved thermally stable after annealing typically used for neutron damage recovery. We then extended this technology to thicker detectors up to 2 cm, requiring optimization of each process step due to the junction thinness and abruptness. Improvements included dust reduction, chemical surface cleaning, gold-free photolithography, chemical-mechanical polishing, and contact pressure reduction using metal-coated polymer sheets. The optimized process yielded a detector prototype with breakdown voltage significantly higher than the depletion voltage, enabling its effective use as gamma radiation detector. This technology paves the way for next-generation segmented HPGe detectors with precise event localization, enhancing imaging and tracking capabilities for applications in nuclear physics, medical diagnostics, homeland security, and space research.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.