提高ZnSnO3/rGO纳米材料在超级电容器器件中的性能

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
F.F. Alharabi , Nidhal Drissi , Hala M. Abo-Dief , Abdelaziz Gassoumi , Abhinav Kumar , Hidayath Mirza , Tahleel Jabbar , Saira Riaz
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引用次数: 0

摘要

全球对能源的需求不断增加,制造储能装置以满足不间断的能源需求是研究人员考虑的问题。因此,本文采用类似的方法,通过简单的溶剂热法制备了用于超级电容器的ZnSnO3/rGO复合电极材料。通过x射线衍射(XRD)、能谱(EDS)、扫描电镜(SEM)、红外光谱(FT-IR)和布鲁诺尔-埃米特-泰勒表面积分析(BET)等不同的物理表征技术对材料进行了测试,分别确定了所有制备材料的结晶度、组成、形貌、功能和表面积。在碱性3 M (KOH)电解溶液中进行CV、GCD、ECSA、EIS等电化学测试,观察各制备材料的电化学行为。ZnSnO3/rGO复合材料在Cd 1 a g−1时具有显著的比电容1149.6 F g−1,能量密度为86.6 Wh kg−1,功率密度为368.3 W kg−1。因此,这些结论表明ZnSnO3/rGO是储能和转换应用的最佳应用材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Elevating performance of ZnSnO3/rGO nanomaterials for supercapacitors devices
The demand of energy increases globally, and it seeks the consideration of researchers to fabricate the energy storing devices to fulfill the uninterruptible demand of energy. Therefore, a similar approach was used here, and a ZnSnO3/rGO composite electrode material was fabricated via facile solvothermal approach for supercapacitor application. The material was tested via different physical characterization techniques like X-ray diffraction (XRD), Energy Dispersive spectroscopy (EDS), scanning electron microscopy (SEM), Infrared spectroscopy (FT-IR) and Brunauer-Emmett-Teller surface area analysis (BET) was used to confirmed the crystallinity, composition, morphology, functionality and surface area of all fabricated material, respectively. Furthermore, the different electrochemical test (CV, GCD, ECSA, and EIS) were performed in alkaline 3 M (KOH) electrolytic solution to observe electrochemical behaviour of all prepared material. The ZnSnO3/rGO composite shows a significant specific capacitance 1149.6 F g−1 at Cd 1 A g−1, having energy density (86.6 Wh kg−1) and power density (368.3 W kg−1). Thus, all these conclusions indicate that the ZnSnO3/rGO is a best applicant for energy storage and conversion application.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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