智能切割™技术中的断裂动力学：晶圆变形测量

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-08-17 DOI:10.1016/j.sse.2025.109218

L. Colonel , K. Blanco , S. Tardif , P.E. Acosta Alba , F. Mazen , J. Eymery , D. Landru , F. Rieutord

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引用次数: 0

摘要

高速摄像机有助于表征Smart Cut™技术的分裂步骤。这样就可以在退火时进行全晶圆尺度的变形监测。本文介绍了在断裂步骤中，用于估算原位裂缝扩展时晶圆背面变形和曲率的设置、设备和方法。最后，在此基础上，在整个扩展时间尺度上动态研究了SOI-ready结构的断裂过程。这些结果与使用准时测量方法进行的文献工作一致，并将允许在未来强调过程和结构几何的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Fracture dynamics in Smart Cut™ technology: Wafer deformation measurement

High-Speed Cameras help in characterizing the splitting step in the Smart Cut™ technology. Full wafer-scale deformation monitoring upon annealing is then possible. This paper describes the setup, equipment and methodology used to estimate the backside wafer deformation and curvature upon fracture propagation in situ during the fracture step. Finally, with such a setup, the fracture process of a SOI-ready structure is studied dynamically over the whole propagation time scale. These results are consistent with literature work performed using punctual measurements methods and will allow in the future to emphasize the effect of process’ and structure’s geometry.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.