GaN hemt温度相关I-V特性的高斯分析模型

IF 2.4 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2025-08-01 DOI:10.1109/JEDS.2025.3594767

Zhao Li;Shaohua Zhou

{"title":"GaN hemt温度相关I-V特性的高斯分析模型","authors":"Zhao Li;Shaohua Zhou","doi":"10.1109/JEDS.2025.3594767","DOIUrl":null,"url":null,"abstract":"In this paper, an analytical temperature-dependent I-V model of gallium nitride (GaN) highelectron- mobility transistors (HEMTs) is established by using the Gaussian function. Compared with Curtice, Angelov, and their improved models in the literature, the I-V model proposed in this paper has the characteristics of high modeling accuracy and fast modeling speed. For example, the 3rd order (Gm3) derivative modeling accuracy of the modified Curtice at -45 °C, 75 °C, and 175 °C is 13.81%, 12.09%, and 6.44%, respectively, while at the same temperature, the Gm3 modeling accuracy of the proposed I-V model is 0.77%, 0.52%, and 1.04%, respectively.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"13 ","pages":"954-962"},"PeriodicalIF":2.4000,"publicationDate":"2025-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11106827","citationCount":"0","resultStr":"{\"title\":\"Gaussian-Based Analytical Model for Temperature-Dependent I-V Characteristics of GaN HEMTs\",\"authors\":\"Zhao Li;Shaohua Zhou\",\"doi\":\"10.1109/JEDS.2025.3594767\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, an analytical temperature-dependent I-V model of gallium nitride (GaN) highelectron- mobility transistors (HEMTs) is established by using the Gaussian function. Compared with Curtice, Angelov, and their improved models in the literature, the I-V model proposed in this paper has the characteristics of high modeling accuracy and fast modeling speed. For example, the 3rd order (Gm3) derivative modeling accuracy of the modified Curtice at -45 °C, 75 °C, and 175 °C is 13.81%, 12.09%, and 6.44%, respectively, while at the same temperature, the Gm3 modeling accuracy of the proposed I-V model is 0.77%, 0.52%, and 1.04%, respectively.\",\"PeriodicalId\":13210,\"journal\":{\"name\":\"IEEE Journal of the Electron Devices Society\",\"volume\":\"13 \",\"pages\":\"954-962\"},\"PeriodicalIF\":2.4000,\"publicationDate\":\"2025-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11106827\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of the Electron Devices Society\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/11106827/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11106827/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

本文利用高斯函数建立了氮化镓（GaN）高电子迁移率晶体管（HEMTs）的解析温度依赖I-V模型。与Curtice、Angelov及其改进的文献模型相比，本文提出的I-V模型具有建模精度高、建模速度快的特点。例如，改进的Curtice在-45℃、75℃和175℃下的三阶（Gm3）导数建模精度分别为13.81%、12.09%和6.44%，而在相同温度下，所提出的I-V模型的Gm3建模精度分别为0.77%、0.52%和1.04%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Gaussian-Based Analytical Model for Temperature-Dependent I-V Characteristics of GaN HEMTs

In this paper, an analytical temperature-dependent I-V model of gallium nitride (GaN) highelectron- mobility transistors (HEMTs) is established by using the Gaussian function. Compared with Curtice, Angelov, and their improved models in the literature, the I-V model proposed in this paper has the characteristics of high modeling accuracy and fast modeling speed. For example, the 3rd order (Gm3) derivative modeling accuracy of the modified Curtice at -45 °C, 75 °C, and 175 °C is 13.81%, 12.09%, and 6.44%, respectively, while at the same temperature, the Gm3 modeling accuracy of the proposed I-V model is 0.77%, 0.52%, and 1.04%, respectively.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.