非线性输运状态下记忆交点阵列的行为SPICE模型

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-08-15 DOI:10.1016/j.sse.2025.109214

X. Pérez , R. Picos , J. Suñé , E. Miranda

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引用次数: 0

摘要

本文提出了M × N记忆交点阵列（CPAs）的全行为SPICE模型。该方法结合了电阻开关器件的忆阻二极管模型的电流-电压特性，可以同时考虑忆阻器的线性（低压）和非线性（高压）输运机制。在低电压下，该模型符合基于矩阵向量乘法（MVM）方法的传统线性公式。然而，在高电压下，这种代数运算不再有效。根据周围电路的要求，该型号支持两种工作模式：压控电流源（VCCS）和压控电压源（VCVS）。电流控制模式对于特定应用也是可行的。本文提供了应用这些不同模式的基本准则。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Behavioral SPICE model for memristive crosspoint arrays operating in the nonlinear transport regime

In this letter, a fully behavioral SPICE model for M × N memristive crosspoint arrays (CPAs) is presented. The proposed approach incorporates the current–voltage characteristics of the memdiode model for resistive switching devices, which can account for both the linear (low-voltage) and nonlinear (high-voltage) transport regimes of memristors. At low voltages, the model coincides with the conventional linear formulation based on matrix–vector multiplication (MVM) method. At high voltages, however, this algebraic operation is no longer valid. The model supports two operation modes depending on the requirements of the surrounding circuitry: voltage-controlled current source (VCCS) and voltage-controlled voltage source (VCVS). Current-controlled modes are also feasible for specific applications. Basic guidelines for applying these different modes are provided.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.