利用TCAD过程仿真器和器件仿真器对底部介质隔离叉片场效应管中硅分离器的影响进行了数值研究

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-08-13 DOI:10.1016/j.sse.2025.109211

In Ki Kim, Sung-Min Hong

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引用次数: 0

摘要

在这项工作中，我们研究了硅分离器对底部介电隔离（BDI）叉片场效应晶体管（fset）的制造和性能的影响，使用我们的内部技术计算机辅助设计过程模拟器和器件模拟器。该过程仿真器采用三维多水平集方法实现，模拟了不同工艺条件下BDI fset的制备过程。我们的结果表明，添加硅分离器是BDI fset的合理选择。为了从电气性能的角度验证这一结论，我们使用我们内部的设备模拟器模拟了设备的电气特性。由过程仿真器生成的器件结构直接用于器件仿真。器件仿真结果证实，即使考虑到器件性能，集成硅分离器仍然是最佳选择。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Numerical investigation of effect of Si separator in bottom dielectric isolation forksheet FETs via in-house TCAD process emulator and device simulator

In this work, we investigate the effect of a Si separator on the fabrication and performance of a bottom dielectric isolation (BDI) forksheet field-effect transistor (FSFET) using our in-house technology computer-aided design process emulator and device simulator. The process emulator is implemented with a three-dimensional multi-level-set method to emulate the BDI FSFET fabrication under various process conditions. Our results demonstrate that the addition of a Si separator is a plausible option for the BDI FSFET. To verify this conclusion from an electrical performance perspective, we simulate the electrical characteristics of the devices using our in-house device simulator. The device structures generated from the process emulator are directly used for the device simulation. The device simulation results confirm that incorporating a Si separator remains the optimal choice, even when considering the device performance.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.