Simulations studies of avalanche multiplication effect in avalanche-luminescence dual-action structure for noncarrier injection Nano-LED

As an emerging driving mode based on the principle of electrostatic induction, the noncarrier injection (NCI) mode is expected to propel micro/nano-based light-emitting display technology toward a future that is more immersive, intelligent, and integrated. However, the further improvement of electroluminescence efficiency is a problem to be solved urgently at present for the nanoscale light-emitting diode (nLED) operating in NCI mode. In this work, the avalanche multiplication effect in the NCI-nLED is investigated through finite element simulations. The carriers generated by the avalanche effect play a key role in enhancing the performance of NCI-nLED is revealed. The dynamic variation of carrier concentration and the energy band is studied to analyze the generation process of the avalanche effect and the mechanism of noncarrier electroluminescence enhancement. Importantly, we propose a potentially ultra-simple symmetrical structure characterized by two single-quantum wells (QWs) avalanche junctions, where a single-QW functions as both the avalanche layer and the luminescence layer. It is demonstrated that the electroluminescence intensity of this structure can be increased to 14.19 times compared with that of original structure. The simulation work advances the theoretical model for understanding the NCI mode and opens a new perspective for the application expansion of display technology.