三维NAND闪存Vth分布中z干扰的重编程定量分析

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-08-05 DOI:10.1016/j.sse.2025.109198

Jooyoung Lee , Jinil Yoo , Hyungcheol Shin

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引用次数: 0

摘要

在本研究中，我们研究了重编程方案对3D NAND闪存阈值电压（Vth）分布中z干扰缓解的影响。采用统计蒙特卡罗模拟方法再现多单元产生的分布，并采用增量步进脉冲规划（ISPP）。在此过程中，使用了随机电报噪声（RTN）和ISPP噪声。这一结果使我们能够观察到z干涉减小后的分布变化，并从多个角度对其进行分析。结果表明，该方法的分布宽度、读水平间隔的标准差和离群细胞数均有所减小。此外，我们还根据分布窗口设置和重编程方案的应用检查了z干涉的影响。

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Quantitative analysis on z-interference using reprogram scheme in 3D NAND flash memory Vth distribution

In this research, we investigated the impact of Reprogram scheme on Z-interference mitigation in the threshold voltage (V_th) distribution of 3D NAND Flash Memory. Statistical Monte-Carlo Simulation was conducted to reproduce the distribution arising from multiple cells, and Incremental Step Pulse Programming (ISPP) was used. During this process, Random Telegraph Noise (RTN) and ISPP noise were applied. The results enabled us to observe the changes in the distribution reflecting reduced z-interference, which were analyzed from various perspectives. It was confirmed that the distribution width, standard deviation of read level intervals, and number of outlier cells are all decreased. Furthermore, we examined the influence of z-interference according to distribution window settings and the application of reprogram scheme.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.