小信号PD SOI MOSFET模型：考虑冲击电离和自热效应

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-07-29 DOI:10.1016/j.sse.2025.109200

Narendra Pratap Singh , Shashank Banchhor , Ashutosh Yadav , Ashwaini Goswami , Avinash Singh , Rohit Ranjan , Sudeb Dasgupta , Anand Bulusu

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引用次数: 0

摘要

部分贫化（PD）绝缘体上硅（SOI）器件中的浮体（FB）效应具有提高能效的潜力。这是因为可以利用浮体电位来调制阈值电压，从而提高模拟电路设计的净空，从而实现低压工作。我们提出了一种新的基于物理的FB势模型，该模型考虑了低端偏置（VDS和VGS）操作的冲击电离（II）和自热（SH）效应。随后，利用所提出的FB电位模型建立了PD SOI器件的小信号参数（gm和Ro）模型。该模型将有助于模拟设计人员通过考虑成熟PDSOI技术中迄今未使用的FB效应来设计节能模拟电路。

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Small signal PD SOI MOSFET model: considering impact ionization and self-heating effects

The floating body (FB) effect in Partially Depleted (PD) Silicon-on-Insulator (SOI) devices has the potential to be utilized for enhancing energy efficiency. This is because the floating body potential can be leveraged to modulate the threshold voltage, thereby improving headroom in analog circuit design and thus enabling low-voltage operation. We propose a novel physics-based FB potential model that considers impact ionization (II) and self-heating (SH) effects for low terminal bias (V_DS and V_GS) operation. Subsequently, the proposed FB potential model is utilized to develop a model for the small-signal parameters (gm and Ro) of a PD SOI device. This proposed model will be useful for an analog designers to design an energy-efficient analog circuits by considering hitherto unused FB effects in mature PDSOI technology.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.