AlGaN/GaN hemt脱态横向电场和击穿电压的解析建模

IF 2.4 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2025-07-14 DOI:10.1109/JEDS.2025.3588675

Soumen Deb;Amitava DasGupta;Nandita DasGupta

{"title":"AlGaN/GaN hemt脱态横向电场和击穿电压的解析建模","authors":"Soumen Deb;Amitava DasGupta;Nandita DasGupta","doi":"10.1109/JEDS.2025.3588675","DOIUrl":null,"url":null,"abstract":"A physics based model for the off-state lateral electric field in the channel of an AlGaN/GaN High Electron Mobility Transistor (HEMT) is developed by solving 2-D Poison’s equation under the gate and considering piecewise linear approximation of the lateral electric field in the depletion region adjacent to the gate edge in drain access region. The model is used to calculate the impact ionisation factor and hence the breakdown voltage of the device. The results obtained from the model show an excellent match with simulation results obtained from Sentaurus TCAD for a wide range of design parameters of the device such as Al-mole fraction in AlGaN barrier layer, as well as gate and drain biases.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"13 ","pages":"615-624"},"PeriodicalIF":2.4000,"publicationDate":"2025-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11079609","citationCount":"0","resultStr":"{\"title\":\"Analytical Modeling for Off-State Lateral Electric Field and Breakdown Voltage of AlGaN/GaN HEMTs\",\"authors\":\"Soumen Deb;Amitava DasGupta;Nandita DasGupta\",\"doi\":\"10.1109/JEDS.2025.3588675\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A physics based model for the off-state lateral electric field in the channel of an AlGaN/GaN High Electron Mobility Transistor (HEMT) is developed by solving 2-D Poison’s equation under the gate and considering piecewise linear approximation of the lateral electric field in the depletion region adjacent to the gate edge in drain access region. The model is used to calculate the impact ionisation factor and hence the breakdown voltage of the device. The results obtained from the model show an excellent match with simulation results obtained from Sentaurus TCAD for a wide range of design parameters of the device such as Al-mole fraction in AlGaN barrier layer, as well as gate and drain biases.\",\"PeriodicalId\":13210,\"journal\":{\"name\":\"IEEE Journal of the Electron Devices Society\",\"volume\":\"13 \",\"pages\":\"615-624\"},\"PeriodicalIF\":2.4000,\"publicationDate\":\"2025-07-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11079609\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of the Electron Devices Society\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/11079609/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11079609/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

通过求解栅极下的二维Poison方程，考虑栅极边缘附近耗尽区侧电场的线性逼近，建立了AlGaN/GaN高电子迁移率晶体管（HEMT）沟道内非稳态侧电场的物理模型。该模型用于计算冲击电离因子，从而计算器件的击穿电压。在AlGaN阻挡层al -摩尔分数、栅极偏置和漏极偏置等器件设计参数上，模型结果与Sentaurus TCAD仿真结果吻合良好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Analytical Modeling for Off-State Lateral Electric Field and Breakdown Voltage of AlGaN/GaN HEMTs

A physics based model for the off-state lateral electric field in the channel of an AlGaN/GaN High Electron Mobility Transistor (HEMT) is developed by solving 2-D Poison’s equation under the gate and considering piecewise linear approximation of the lateral electric field in the depletion region adjacent to the gate edge in drain access region. The model is used to calculate the impact ionisation factor and hence the breakdown voltage of the device. The results obtained from the model show an excellent match with simulation results obtained from Sentaurus TCAD for a wide range of design parameters of the device such as Al-mole fraction in AlGaN barrier layer, as well as gate and drain biases.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.