Kun Yang , Hyojun Choi , Ji Sang Ahn , Eun Ji Ju , Dong In Han , Se Hyun Kim , Ju Yong Park , Heejin Hong , Kwan Hyun Park , Jeong Hwan Han , Min Hyuk Park
{"title":"利用氧含量调制Ru电极研究铁电材料Hf0.5Zr0.5O2的界面氧化还原化学","authors":"Kun Yang , Hyojun Choi , Ji Sang Ahn , Eun Ji Ju , Dong In Han , Se Hyun Kim , Ju Yong Park , Heejin Hong , Kwan Hyun Park , Jeong Hwan Han , Min Hyuk Park","doi":"10.1016/j.jmat.2025.101110","DOIUrl":null,"url":null,"abstract":"<div><div>The impact of oxygen content in the Ru electrode, grown using atomic layer deposition on ferroelectricity in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> film is investigated. The oxygen content in Ru can be modulated by simply adjusting the deposition temperature from 210 °C to 300 °C. Higher oxygen content in Ru reduces the oxygen vacancy concentration in subsequently grown Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> film, thereby mitigating the wake-up effect. However, the monoclinic phase fraction increased with decreasing Ru deposition temperature, resulting in a decrease in remanent polarization. The decreased oxygen vacancy concentration by oxygen diffusion from Ru electrode deposited at 210 °C could decrease the leakage current density compared to that grown at higher temperatures. Nonetheless, the switching endurance of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> film grown on Ru deposited at 210 °C was shorter than those on Ru deposited at 300 °C by 2 order of magnitude, being attributed to the oxygen diffusion caused interfacial damages. This observation suggests that the interfacial redox reactions between the electrode and Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> critically influence defect concentration, polymorphism, and the resulting ferroelectricity when using an atomic layer deposited Ru electrode to examine the impact of interfacial redox chemistry.</div></div>","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"11 6","pages":"Article 101110"},"PeriodicalIF":9.6000,"publicationDate":"2025-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Utilization of oxygen content modulated Ru electrode to examine the interfacial redox chemistry of ferroelectric Hf0.5Zr0.5O2\",\"authors\":\"Kun Yang , Hyojun Choi , Ji Sang Ahn , Eun Ji Ju , Dong In Han , Se Hyun Kim , Ju Yong Park , Heejin Hong , Kwan Hyun Park , Jeong Hwan Han , Min Hyuk Park\",\"doi\":\"10.1016/j.jmat.2025.101110\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>The impact of oxygen content in the Ru electrode, grown using atomic layer deposition on ferroelectricity in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> film is investigated. The oxygen content in Ru can be modulated by simply adjusting the deposition temperature from 210 °C to 300 °C. Higher oxygen content in Ru reduces the oxygen vacancy concentration in subsequently grown Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> film, thereby mitigating the wake-up effect. However, the monoclinic phase fraction increased with decreasing Ru deposition temperature, resulting in a decrease in remanent polarization. The decreased oxygen vacancy concentration by oxygen diffusion from Ru electrode deposited at 210 °C could decrease the leakage current density compared to that grown at higher temperatures. Nonetheless, the switching endurance of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> film grown on Ru deposited at 210 °C was shorter than those on Ru deposited at 300 °C by 2 order of magnitude, being attributed to the oxygen diffusion caused interfacial damages. This observation suggests that the interfacial redox reactions between the electrode and Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> critically influence defect concentration, polymorphism, and the resulting ferroelectricity when using an atomic layer deposited Ru electrode to examine the impact of interfacial redox chemistry.</div></div>\",\"PeriodicalId\":16173,\"journal\":{\"name\":\"Journal of Materiomics\",\"volume\":\"11 6\",\"pages\":\"Article 101110\"},\"PeriodicalIF\":9.6000,\"publicationDate\":\"2025-07-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materiomics\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2352847825001005\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materiomics","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2352847825001005","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Utilization of oxygen content modulated Ru electrode to examine the interfacial redox chemistry of ferroelectric Hf0.5Zr0.5O2
The impact of oxygen content in the Ru electrode, grown using atomic layer deposition on ferroelectricity in Hf0.5Zr0.5O2 film is investigated. The oxygen content in Ru can be modulated by simply adjusting the deposition temperature from 210 °C to 300 °C. Higher oxygen content in Ru reduces the oxygen vacancy concentration in subsequently grown Hf0.5Zr0.5O2 film, thereby mitigating the wake-up effect. However, the monoclinic phase fraction increased with decreasing Ru deposition temperature, resulting in a decrease in remanent polarization. The decreased oxygen vacancy concentration by oxygen diffusion from Ru electrode deposited at 210 °C could decrease the leakage current density compared to that grown at higher temperatures. Nonetheless, the switching endurance of Hf0.5Zr0.5O2 film grown on Ru deposited at 210 °C was shorter than those on Ru deposited at 300 °C by 2 order of magnitude, being attributed to the oxygen diffusion caused interfacial damages. This observation suggests that the interfacial redox reactions between the electrode and Hf0.5Zr0.5O2 critically influence defect concentration, polymorphism, and the resulting ferroelectricity when using an atomic layer deposited Ru electrode to examine the impact of interfacial redox chemistry.
期刊介绍:
The Journal of Materiomics is a peer-reviewed open-access journal that aims to serve as a forum for the continuous dissemination of research within the field of materials science. It particularly emphasizes systematic studies on the relationships between composition, processing, structure, property, and performance of advanced materials. The journal is supported by the Chinese Ceramic Society and is indexed in SCIE and Scopus. It is commonly referred to as J Materiomics.