Bu Kyeong Hwang, Hyeon Woo Kim, Bo Ram Lee, Eun Jin Park, Hyunsung Jung, Min-Kyu Son, Sung Beom Cho, Hyeon Jin Jung, Moonsuk Yi and Soo Won Heo
{"title":"通过控制深层氧空位†提高溶液加工IYZO薄膜晶体管的电学性能和稳定性","authors":"Bu Kyeong Hwang, Hyeon Woo Kim, Bo Ram Lee, Eun Jin Park, Hyunsung Jung, Min-Kyu Son, Sung Beom Cho, Hyeon Jin Jung, Moonsuk Yi and Soo Won Heo","doi":"10.1039/D4TC05455E","DOIUrl":null,"url":null,"abstract":"<p >In this study, ytterbium (Yb) was introduced as a dopant to improve the stability of indium–zinc oxide (IZO) thin film transistors (TFTs). The stability and electrical performance of indium–ytterbium–zinc oxide (IYZO) TFTs were compared with those of indium–gallium–zinc oxide (IGZO) TFTs with gallium (Ga) as a typical dopant. In particular, under a negative bias illumination stress (NBIS), among the various operating condition stability evaluations, the Δ threshold voltage (<em>V</em><small><sub>th</sub></small>) of the IGZO (Ga: 3%) TFT (−7.6 V) was 23% better than that of the IZO TFT (−9.8 V); however, Δ<em>V</em><small><sub>th</sub></small> of the IYZO (Yb: 3%) (−5.8 V) TFT was not only 41% better than that of the IZO TFT but also 19% better than that of the IGZO TFT. Under NBIS conditions, the deep level oxygen vacancy (V<small><sub>O</sub></small>) donates electrons to the conduction band minimum, causing a large negative shift in <em>V</em><small><sub>th</sub></small>. Therefore, the improved stability of the IYZO TFT indicates that Yb doping effectively reduced the formation of defect state like deep level V<small><sub>O</sub></small>, which was demonstrated by theoretical density functional calculations. In addition, the mobility of the IYZO TFT was 12.22 cm<small><sup>2</sup></small> V<small><sup>−1</sup></small> s<small><sup>−1</sup></small>, which was 3% better than that of the IZO TFT (11.83 cm<small><sup>2</sup></small> V<small><sup>−1</sup></small> s<small><sup>−1</sup></small>). Conversely, the mobility of the IGZO TFT was 10.34 cm<small><sup>2</sup></small> V<small><sup>−1</sup></small> s<small><sup>−1</sup></small>, demonstrating a 13% decrease compared to the IZO TFT. Notably, Ga doping improved the stability but degraded the electrical performance, whereas Yb doping improved the stability and electrical properties.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 29","pages":" 14910-14923"},"PeriodicalIF":5.1000,"publicationDate":"2025-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhanced electrical properties and stability of solution processed IYZO thin film transistors by controlling deep level oxygen vacancies†\",\"authors\":\"Bu Kyeong Hwang, Hyeon Woo Kim, Bo Ram Lee, Eun Jin Park, Hyunsung Jung, Min-Kyu Son, Sung Beom Cho, Hyeon Jin Jung, Moonsuk Yi and Soo Won Heo\",\"doi\":\"10.1039/D4TC05455E\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >In this study, ytterbium (Yb) was introduced as a dopant to improve the stability of indium–zinc oxide (IZO) thin film transistors (TFTs). The stability and electrical performance of indium–ytterbium–zinc oxide (IYZO) TFTs were compared with those of indium–gallium–zinc oxide (IGZO) TFTs with gallium (Ga) as a typical dopant. In particular, under a negative bias illumination stress (NBIS), among the various operating condition stability evaluations, the Δ threshold voltage (<em>V</em><small><sub>th</sub></small>) of the IGZO (Ga: 3%) TFT (−7.6 V) was 23% better than that of the IZO TFT (−9.8 V); however, Δ<em>V</em><small><sub>th</sub></small> of the IYZO (Yb: 3%) (−5.8 V) TFT was not only 41% better than that of the IZO TFT but also 19% better than that of the IGZO TFT. Under NBIS conditions, the deep level oxygen vacancy (V<small><sub>O</sub></small>) donates electrons to the conduction band minimum, causing a large negative shift in <em>V</em><small><sub>th</sub></small>. Therefore, the improved stability of the IYZO TFT indicates that Yb doping effectively reduced the formation of defect state like deep level V<small><sub>O</sub></small>, which was demonstrated by theoretical density functional calculations. In addition, the mobility of the IYZO TFT was 12.22 cm<small><sup>2</sup></small> V<small><sup>−1</sup></small> s<small><sup>−1</sup></small>, which was 3% better than that of the IZO TFT (11.83 cm<small><sup>2</sup></small> V<small><sup>−1</sup></small> s<small><sup>−1</sup></small>). Conversely, the mobility of the IGZO TFT was 10.34 cm<small><sup>2</sup></small> V<small><sup>−1</sup></small> s<small><sup>−1</sup></small>, demonstrating a 13% decrease compared to the IZO TFT. Notably, Ga doping improved the stability but degraded the electrical performance, whereas Yb doping improved the stability and electrical properties.</p>\",\"PeriodicalId\":84,\"journal\":{\"name\":\"Journal of Materials Chemistry C\",\"volume\":\" 29\",\"pages\":\" 14910-14923\"},\"PeriodicalIF\":5.1000,\"publicationDate\":\"2025-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Chemistry C\",\"FirstCategoryId\":\"1\",\"ListUrlMain\":\"https://pubs.rsc.org/en/content/articlelanding/2025/tc/d4tc05455e\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Chemistry C","FirstCategoryId":"1","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2025/tc/d4tc05455e","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Enhanced electrical properties and stability of solution processed IYZO thin film transistors by controlling deep level oxygen vacancies†
In this study, ytterbium (Yb) was introduced as a dopant to improve the stability of indium–zinc oxide (IZO) thin film transistors (TFTs). The stability and electrical performance of indium–ytterbium–zinc oxide (IYZO) TFTs were compared with those of indium–gallium–zinc oxide (IGZO) TFTs with gallium (Ga) as a typical dopant. In particular, under a negative bias illumination stress (NBIS), among the various operating condition stability evaluations, the Δ threshold voltage (Vth) of the IGZO (Ga: 3%) TFT (−7.6 V) was 23% better than that of the IZO TFT (−9.8 V); however, ΔVth of the IYZO (Yb: 3%) (−5.8 V) TFT was not only 41% better than that of the IZO TFT but also 19% better than that of the IGZO TFT. Under NBIS conditions, the deep level oxygen vacancy (VO) donates electrons to the conduction band minimum, causing a large negative shift in Vth. Therefore, the improved stability of the IYZO TFT indicates that Yb doping effectively reduced the formation of defect state like deep level VO, which was demonstrated by theoretical density functional calculations. In addition, the mobility of the IYZO TFT was 12.22 cm2 V−1 s−1, which was 3% better than that of the IZO TFT (11.83 cm2 V−1 s−1). Conversely, the mobility of the IGZO TFT was 10.34 cm2 V−1 s−1, demonstrating a 13% decrease compared to the IZO TFT. Notably, Ga doping improved the stability but degraded the electrical performance, whereas Yb doping improved the stability and electrical properties.
期刊介绍:
The Journal of Materials Chemistry is divided into three distinct sections, A, B, and C, each catering to specific applications of the materials under study:
Journal of Materials Chemistry A focuses primarily on materials intended for applications in energy and sustainability.
Journal of Materials Chemistry B specializes in materials designed for applications in biology and medicine.
Journal of Materials Chemistry C is dedicated to materials suitable for applications in optical, magnetic, and electronic devices.
Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive.
Bioelectronics
Conductors
Detectors
Dielectrics
Displays
Ferroelectrics
Lasers
LEDs
Lighting
Liquid crystals
Memory
Metamaterials
Multiferroics
Photonics
Photovoltaics
Semiconductors
Sensors
Single molecule conductors
Spintronics
Superconductors
Thermoelectrics
Topological insulators
Transistors