通过控制深层氧空位†提高溶液加工IYZO薄膜晶体管的电学性能和稳定性

IF 5.1 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Bu Kyeong Hwang, Hyeon Woo Kim, Bo Ram Lee, Eun Jin Park, Hyunsung Jung, Min-Kyu Son, Sung Beom Cho, Hyeon Jin Jung, Moonsuk Yi and Soo Won Heo
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引用次数: 0

摘要

在本研究中,引入镱(Yb)作为掺杂剂来提高铟锌氧化物(IZO)薄膜晶体管(TFTs)的稳定性。比较了铟钇锌氧化物(IYZO) tft与以镓(Ga)为典型掺杂剂的铟镓锌氧化物(IGZO) tft的稳定性和电性能。特别是在负偏置照明应力(NBIS)下,在各种工况稳定性评价中,IGZO (Ga: 3%) TFT的Δ阈值电压(Vth)(−7.6 V)比IZO TFT(−9.8 V)高23%;而IYZO (Yb: 3%)(−5.8 V) TFT的ΔVth不仅比IZO TFT高41%,而且比IGZO TFT高19%。在NBIS条件下,深能级氧空位(VO)给导带的电子最少,导致Vth出现较大的负位移。因此,IYZO TFT稳定性的提高表明,Yb掺杂有效地减少了深层VO等缺陷态的形成,理论密度泛函计算证实了这一点。此外,IYZO TFT的迁移率为12.22 cm2 V−1 s−1,比IZO TFT的11.83 cm2 V−1 s−1提高了3%。相反,IGZO TFT的迁移率为10.34 cm2 V−1 s−1,与IZO TFT相比降低了13%。值得注意的是,Ga掺杂提高了稳定性,但降低了电性能,而Yb掺杂提高了稳定性和电性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Enhanced electrical properties and stability of solution processed IYZO thin film transistors by controlling deep level oxygen vacancies†

Enhanced electrical properties and stability of solution processed IYZO thin film transistors by controlling deep level oxygen vacancies†

In this study, ytterbium (Yb) was introduced as a dopant to improve the stability of indium–zinc oxide (IZO) thin film transistors (TFTs). The stability and electrical performance of indium–ytterbium–zinc oxide (IYZO) TFTs were compared with those of indium–gallium–zinc oxide (IGZO) TFTs with gallium (Ga) as a typical dopant. In particular, under a negative bias illumination stress (NBIS), among the various operating condition stability evaluations, the Δ threshold voltage (Vth) of the IGZO (Ga: 3%) TFT (−7.6 V) was 23% better than that of the IZO TFT (−9.8 V); however, ΔVth of the IYZO (Yb: 3%) (−5.8 V) TFT was not only 41% better than that of the IZO TFT but also 19% better than that of the IGZO TFT. Under NBIS conditions, the deep level oxygen vacancy (VO) donates electrons to the conduction band minimum, causing a large negative shift in Vth. Therefore, the improved stability of the IYZO TFT indicates that Yb doping effectively reduced the formation of defect state like deep level VO, which was demonstrated by theoretical density functional calculations. In addition, the mobility of the IYZO TFT was 12.22 cm2 V−1 s−1, which was 3% better than that of the IZO TFT (11.83 cm2 V−1 s−1). Conversely, the mobility of the IGZO TFT was 10.34 cm2 V−1 s−1, demonstrating a 13% decrease compared to the IZO TFT. Notably, Ga doping improved the stability but degraded the electrical performance, whereas Yb doping improved the stability and electrical properties.

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来源期刊
Journal of Materials Chemistry C
Journal of Materials Chemistry C MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
10.80
自引率
6.20%
发文量
1468
期刊介绍: The Journal of Materials Chemistry is divided into three distinct sections, A, B, and C, each catering to specific applications of the materials under study: Journal of Materials Chemistry A focuses primarily on materials intended for applications in energy and sustainability. Journal of Materials Chemistry B specializes in materials designed for applications in biology and medicine. Journal of Materials Chemistry C is dedicated to materials suitable for applications in optical, magnetic, and electronic devices. Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive. Bioelectronics Conductors Detectors Dielectrics Displays Ferroelectrics Lasers LEDs Lighting Liquid crystals Memory Metamaterials Multiferroics Photonics Photovoltaics Semiconductors Sensors Single molecule conductors Spintronics Superconductors Thermoelectrics Topological insulators Transistors
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