通过协同负热膨胀和电荷补偿效应调节KxMgxSc1.95−xMo3O12:5%Eu3+荧光粉的发光热猝灭性能

IF 5.1 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Wenshen Fan, Qi Miao, Yuanbing Mao, Yongjie Wang, Li Li, Shogo Kawaguchi, Erjun Liang and Qilong Gao
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引用次数: 0

摘要

负热膨胀(NTE)化合物为促进我们对热膨胀现象的理解及其在各个领域的应用提供了重要的机会。然而,由于NTE材料的异常晶格效应而产生的独特性质仍然没有得到充分的研究,特别是通过NTE基主体材料中的阳离子取代来解决发光热猝灭问题。在这项研究中,我们合成了KxMgxSc1.95−xMo3O12:5%Eu3+荧光粉(x = 0,0.4, 0.7, 1.0),并利用温度相关同步辐射,扫描电子显微镜和温度相关拉曼光谱研究了它们的晶体结构,微观结构和热膨胀性能。当x = 0.4时,对应的荧光粉具有接近于零的膨胀,αV = - 0.58 × 10−6 K−1,而当x = 0.7和1.0时,对应的荧光粉具有正的热膨胀,热膨胀系数分别为αV = 2.82和3.59 × 10−6 K−1。此外,我们通过温度依赖的紫外可见吸收、光致发光激发和发射光谱分析评估了它们的发光热稳定性和潜在的机制。有趣的是,K0.4Mg0.4Sc1.55Mo3012:5%Eu3+和K0.7Mg0.7Sc1.25Mo3012:5%Eu3+表现出明显的热稳定性,而KMgSc0.95Mo3012:5%Eu3+表现出强烈的热猝灭。在这些荧光粉中,K0.4Mg0.4Sc1.55Mo3012:5%Eu3+表现出负的热猝灭行为,即使在700 K下也能保持其初始强度的182%。发光衰减分析表明,耐热猝灭是由基体的NTE和K+电荷补偿的协同作用引起的。本工作探索了nte基荧光粉的阳离子取代策略,以引入一种新的近零热膨胀材料,并鉴定出具有宽温度范围热稳定性的红色荧光粉。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Tuning luminescence thermal quenching performance of KxMgxSc1.95−xMo3O12:5%Eu3+ phosphor via synergistic negative thermal expansion and charge compensation effects†

Tuning luminescence thermal quenching performance of KxMgxSc1.95−xMo3O12:5%Eu3+ phosphor via synergistic negative thermal expansion and charge compensation effects†

Negative thermal expansion (NTE) compounds offer significant opportunities for advancing our understanding of thermal expansion phenomena and their applications in various fields. However, the unique properties arising from anomalous lattice effects of NTE materials remain underexplored for addressing luminescence thermal quenching, particularly through cation substitution in NTE-based host materials. In this study, we have synthesized KxMgxSc1.95−xMo3O12:5%Eu3+ phosphors (x = 0, 0.4, 0.7, 1.0) and investigated their crystal structure, microstructure, and thermal expansion properties utilizing temperature-dependent synchrotron radiation, scanning electron microscopy, and temperature-dependent Raman spectroscopy. The corresponding phosphor with x = 0.4 possesses near-zero expansion with αV = −0.58 × 10−6 K−1, while those with x = 0.7 and 1.0 show positive thermal expansion with thermal expansion coefficient αV = 2.82 and 3.59 × 10−6 K−1, respectively. Furthermore, we have assessed their luminescence thermal stability and the underlying mechanisms through temperature-dependent UV-visible absorption, photoluminescence excitation, and emission spectra spectroscopy. Interestingly, K0.4Mg0.4Sc1.55Mo3012:5%Eu3+ and K0.7Mg0.7Sc1.25Mo3012:5%Eu3+ exhibit significant thermal stability, whereas KMgSc0.95Mo3012:5%Eu3+ demonstrates strong thermal quenching. Among these phosphors, K0.4Mg0.4Sc1.55Mo3012:5%Eu3+ exhibits negative thermal quenching behavior, retaining 182% of its initial intensity measured at 300 K, even at 700 K. The luminescence decay analysis indicates that the resistance to thermal quenching arises from the synergistic effects of the NTE of the host and K+ charge compensation. This work has explored a cation substitution strategy for NTE-based phosphors to introduce a novel near-zero thermal expansion material and identify a red phosphor with wide-temperature-range thermal stability.

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来源期刊
Journal of Materials Chemistry C
Journal of Materials Chemistry C MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
10.80
自引率
6.20%
发文量
1468
期刊介绍: The Journal of Materials Chemistry is divided into three distinct sections, A, B, and C, each catering to specific applications of the materials under study: Journal of Materials Chemistry A focuses primarily on materials intended for applications in energy and sustainability. Journal of Materials Chemistry B specializes in materials designed for applications in biology and medicine. Journal of Materials Chemistry C is dedicated to materials suitable for applications in optical, magnetic, and electronic devices. Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive. Bioelectronics Conductors Detectors Dielectrics Displays Ferroelectrics Lasers LEDs Lighting Liquid crystals Memory Metamaterials Multiferroics Photonics Photovoltaics Semiconductors Sensors Single molecule conductors Spintronics Superconductors Thermoelectrics Topological insulators Transistors
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