钙钛矿太阳能电池中邻氟取代空穴传输材料的影响:刚性与柔性连接体的影响

IF 5.1 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Telugu Bhim Raju, Chathuranganie A. M. Senevirathne, Motonori Watanabe, Yuki Fujita, Dai Senba and Toshinori Matsushima
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引用次数: 0

摘要

开发稳定、高效的空穴传输材料是实现钙钛矿太阳能电池(PSCs)商业化的关键。在本研究中,我们引入了四种具有D -π-D分子结构的新型HTMs。这些HTMs具有3-氟- n, n -二(4-(甲基硫)苯基)苯胺(TPASF)外端基团,并与各种π-核基团相连。我们的研究表明,改变π连接体会影响HTMs的薄膜形态,从而显著影响器件的性能。具有平面骨架的HTMs, CPDT-OFTPASMe2[2-(2,6-二(4-(甲基硫代)苯基)氨基)-2-氟苯基)- 4h -环戊[2,1-b:3,4-b ']二噻吩-4-乙基)丙二腈]和TTT-OFTPASMe2[4,4 ' -(二噻吩[3,2-b:2 ',3 ' -d]噻吩-2,6-二基]二(3-氟- n, n-二(4-(甲基硫代)苯基)苯胺]形成具有更多空隙的薄膜。相反,ThOEt-OFTPASMe2[4,4 ' -(3,3 ' -二氧基-[2,2 ' -双噻吩]-5,5 ' -二基)双(3-氟- n, n -双(4-(4-甲氧基)苯胺)]和DTP-OFTPASMe2[4,4 ' -(4-甲氧基苯基)- 4h -二硫基[3,2-b:2 ',3 ' -d]吡咯-2,6-二基)双(3-氟- n, n -双(4-(甲基硫基)苯胺)],分别由乙氧基和甲氧基苯基引起抑制作用,阻止薄膜聚集,导致无针孔形态。在测试的四种HTM中,基于新开发的DTP-OFTPASMe2 HTM的器件表现出非凡的前景,平均功率转换效率为18.77%,并且具有良好的热稳定性。随后在环境条件下促进氧化,在非密封装置中效率提高到21.35%。此外,基于空气暴露的dtp - oftpasme2的器件在高湿条件下保持其初始效率约83天,强调了其随着时间的推移的稳健性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Effect of ortho-fluorine substituted hole transport materials for perovskite solar cells: influence of rigid vs. flexible linkers†

Effect of ortho-fluorine substituted hole transport materials for perovskite solar cells: influence of rigid vs. flexible linkers†

The development of stable and efficient hole transporting materials (HTMs) is essential for the commercialization of perovskite solar cells (PSCs). In this study, we introduce four novel HTMs featuring a D–π–D molecular structure. These HTMs have 3-fluoro-N,N-bis(4-(methylthio)phenyl)aniline (TPASF) peripheral terminal groups, which are linked with various π-core moieties. Our investigation reveals that altering the π-linkers affects the film morphology of the HTMs, significantly influencing device performance. HTMs with planar backbones, CPDT-OFTPASMe2 [2-(2,6-bis(4-(bis(4-(methylthio)phenyl)amino)-2-fluorophenyl)-4H-cyclopenta[2,1-b:3,4-b′]dithiophen-4-ylidene)malononitrile] and TTT-OFTPASMe2 [4,4′-(dithieno[3,2-b:2′,3′-d]thiophene-2,6-diyl)bis(3-fluoro-N,N-bis(4-(methylthio)phenyl)aniline)], form films with more voids. In contrast, ThOEt-OFTPASMe2 [4,4′-(3,3′-diethoxy-[2,2′-bithiophene]-5,5′-diyl)bis(3-fluoro-N,N-bis(4-(methylthio)phenyl)aniline)] and DTP-OFTPASMe2 [4,4′-(4-(4-methoxyphenyl)-4H-dithieno[3,2-b:2′,3′-d]pyrrole-2,6-diyl)bis(3-fluoro-N,N-bis(4-(methylthio)phenyl)aniline)], with inhibitory effects caused by ethoxy and methoxy phenyl groups, respectively, prevent film aggregation and result in a pinhole-free morphology. Among the four tested HTMs, the device based on the newly developed DTP-OFTPASMe2 HTM demonstrates exceptional promisedelivering an average power conversion efficiency of 18.77% and exhibiting good thermal stability. Subsequently under amibient conditions to promote oxidation, the efficiency was boosted to 21.35% in unsealed devices. Furthermore, air-exposed DTP-OFTPASMe2-based devices maintain their initial efficiency under high-humidity conditions for approximately 83 days, underscoring their robust performance over time.

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来源期刊
Journal of Materials Chemistry C
Journal of Materials Chemistry C MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
10.80
自引率
6.20%
发文量
1468
期刊介绍: The Journal of Materials Chemistry is divided into three distinct sections, A, B, and C, each catering to specific applications of the materials under study: Journal of Materials Chemistry A focuses primarily on materials intended for applications in energy and sustainability. Journal of Materials Chemistry B specializes in materials designed for applications in biology and medicine. Journal of Materials Chemistry C is dedicated to materials suitable for applications in optical, magnetic, and electronic devices. Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive. Bioelectronics Conductors Detectors Dielectrics Displays Ferroelectrics Lasers LEDs Lighting Liquid crystals Memory Metamaterials Multiferroics Photonics Photovoltaics Semiconductors Sensors Single molecule conductors Spintronics Superconductors Thermoelectrics Topological insulators Transistors
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