Telugu Bhim Raju, Chathuranganie A. M. Senevirathne, Motonori Watanabe, Yuki Fujita, Dai Senba and Toshinori Matsushima
{"title":"钙钛矿太阳能电池中邻氟取代空穴传输材料的影响:刚性与柔性连接体的影响","authors":"Telugu Bhim Raju, Chathuranganie A. M. Senevirathne, Motonori Watanabe, Yuki Fujita, Dai Senba and Toshinori Matsushima","doi":"10.1039/D5TC01565K","DOIUrl":null,"url":null,"abstract":"<p >The development of stable and efficient hole transporting materials (HTMs) is essential for the commercialization of perovskite solar cells (PSCs). In this study, we introduce four novel HTMs featuring a D–π–D molecular structure. These HTMs have 3-fluoro-<em>N,N</em>-bis(4-(methylthio)phenyl)aniline (TPASF) peripheral terminal groups, which are linked with various π-core moieties. Our investigation reveals that altering the π-linkers affects the film morphology of the HTMs, significantly influencing device performance. HTMs with planar backbones, CPDT-OFTPASMe2 [2-(2,6-bis(4-(bis(4-(methylthio)phenyl)amino)-2-fluorophenyl)-4<em>H</em>-cyclopenta[2,1-<em>b</em>:3,4-<em>b</em>′]dithiophen-4-ylidene)malononitrile] and TTT-OFTPASMe2 [4,4′-(dithieno[3,2-<em>b</em>:2′,3′-<em>d</em>]thiophene-2,6-diyl)bis(3-fluoro-<em>N,N</em>-bis(4-(methylthio)phenyl)aniline)], form films with more voids. In contrast, ThOEt-OFTPASMe2 [4,4′-(3,3′-diethoxy-[2,2′-bithiophene]-5,5′-diyl)bis(3-fluoro-<em>N,N</em>-bis(4-(methylthio)phenyl)aniline)] and DTP-OFTPASMe2 [4,4′-(4-(4-methoxyphenyl)-4<em>H</em>-dithieno[3,2-<em>b</em>:2′,3′-<em>d</em>]pyrrole-2,6-diyl)bis(3-fluoro-<em>N,N</em>-bis(4-(methylthio)phenyl)aniline)], with inhibitory effects caused by ethoxy and methoxy phenyl groups, respectively, prevent film aggregation and result in a pinhole-free morphology. Among the four tested HTMs, the device based on the newly developed DTP-OFTPASMe2 HTM demonstrates exceptional promisedelivering an average power conversion efficiency of 18.77% and exhibiting good thermal stability. Subsequently under amibient conditions to promote oxidation, the efficiency was boosted to 21.35% in unsealed devices. Furthermore, air-exposed DTP-OFTPASMe2-based devices maintain their initial efficiency under high-humidity conditions for approximately 83 days, underscoring their robust performance over time.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 29","pages":" 15082-15090"},"PeriodicalIF":5.1000,"publicationDate":"2025-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of ortho-fluorine substituted hole transport materials for perovskite solar cells: influence of rigid vs. flexible linkers†\",\"authors\":\"Telugu Bhim Raju, Chathuranganie A. M. Senevirathne, Motonori Watanabe, Yuki Fujita, Dai Senba and Toshinori Matsushima\",\"doi\":\"10.1039/D5TC01565K\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >The development of stable and efficient hole transporting materials (HTMs) is essential for the commercialization of perovskite solar cells (PSCs). In this study, we introduce four novel HTMs featuring a D–π–D molecular structure. These HTMs have 3-fluoro-<em>N,N</em>-bis(4-(methylthio)phenyl)aniline (TPASF) peripheral terminal groups, which are linked with various π-core moieties. Our investigation reveals that altering the π-linkers affects the film morphology of the HTMs, significantly influencing device performance. HTMs with planar backbones, CPDT-OFTPASMe2 [2-(2,6-bis(4-(bis(4-(methylthio)phenyl)amino)-2-fluorophenyl)-4<em>H</em>-cyclopenta[2,1-<em>b</em>:3,4-<em>b</em>′]dithiophen-4-ylidene)malononitrile] and TTT-OFTPASMe2 [4,4′-(dithieno[3,2-<em>b</em>:2′,3′-<em>d</em>]thiophene-2,6-diyl)bis(3-fluoro-<em>N,N</em>-bis(4-(methylthio)phenyl)aniline)], form films with more voids. In contrast, ThOEt-OFTPASMe2 [4,4′-(3,3′-diethoxy-[2,2′-bithiophene]-5,5′-diyl)bis(3-fluoro-<em>N,N</em>-bis(4-(methylthio)phenyl)aniline)] and DTP-OFTPASMe2 [4,4′-(4-(4-methoxyphenyl)-4<em>H</em>-dithieno[3,2-<em>b</em>:2′,3′-<em>d</em>]pyrrole-2,6-diyl)bis(3-fluoro-<em>N,N</em>-bis(4-(methylthio)phenyl)aniline)], with inhibitory effects caused by ethoxy and methoxy phenyl groups, respectively, prevent film aggregation and result in a pinhole-free morphology. 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Effect of ortho-fluorine substituted hole transport materials for perovskite solar cells: influence of rigid vs. flexible linkers†
The development of stable and efficient hole transporting materials (HTMs) is essential for the commercialization of perovskite solar cells (PSCs). In this study, we introduce four novel HTMs featuring a D–π–D molecular structure. These HTMs have 3-fluoro-N,N-bis(4-(methylthio)phenyl)aniline (TPASF) peripheral terminal groups, which are linked with various π-core moieties. Our investigation reveals that altering the π-linkers affects the film morphology of the HTMs, significantly influencing device performance. HTMs with planar backbones, CPDT-OFTPASMe2 [2-(2,6-bis(4-(bis(4-(methylthio)phenyl)amino)-2-fluorophenyl)-4H-cyclopenta[2,1-b:3,4-b′]dithiophen-4-ylidene)malononitrile] and TTT-OFTPASMe2 [4,4′-(dithieno[3,2-b:2′,3′-d]thiophene-2,6-diyl)bis(3-fluoro-N,N-bis(4-(methylthio)phenyl)aniline)], form films with more voids. In contrast, ThOEt-OFTPASMe2 [4,4′-(3,3′-diethoxy-[2,2′-bithiophene]-5,5′-diyl)bis(3-fluoro-N,N-bis(4-(methylthio)phenyl)aniline)] and DTP-OFTPASMe2 [4,4′-(4-(4-methoxyphenyl)-4H-dithieno[3,2-b:2′,3′-d]pyrrole-2,6-diyl)bis(3-fluoro-N,N-bis(4-(methylthio)phenyl)aniline)], with inhibitory effects caused by ethoxy and methoxy phenyl groups, respectively, prevent film aggregation and result in a pinhole-free morphology. Among the four tested HTMs, the device based on the newly developed DTP-OFTPASMe2 HTM demonstrates exceptional promisedelivering an average power conversion efficiency of 18.77% and exhibiting good thermal stability. Subsequently under amibient conditions to promote oxidation, the efficiency was boosted to 21.35% in unsealed devices. Furthermore, air-exposed DTP-OFTPASMe2-based devices maintain their initial efficiency under high-humidity conditions for approximately 83 days, underscoring their robust performance over time.
期刊介绍:
The Journal of Materials Chemistry is divided into three distinct sections, A, B, and C, each catering to specific applications of the materials under study:
Journal of Materials Chemistry A focuses primarily on materials intended for applications in energy and sustainability.
Journal of Materials Chemistry B specializes in materials designed for applications in biology and medicine.
Journal of Materials Chemistry C is dedicated to materials suitable for applications in optical, magnetic, and electronic devices.
Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive.
Bioelectronics
Conductors
Detectors
Dielectrics
Displays
Ferroelectrics
Lasers
LEDs
Lighting
Liquid crystals
Memory
Metamaterials
Multiferroics
Photonics
Photovoltaics
Semiconductors
Sensors
Single molecule conductors
Spintronics
Superconductors
Thermoelectrics
Topological insulators
Transistors