InAs/GaSb LWIR探测器暗电流受器件参数影响的仿真优化

IF 4.6 2区物理与天体物理 Q1 OPTICS

Optics and Laser Technology Pub Date : 2025-07-21 DOI:10.1016/j.optlastec.2025.113513

Yaqi Zhao , Xiaoning Guan , Jinyi Cheng , Fan Zhang , Dongwei Jiang , Donghai Wu , Feng Zhou , Pengfei Lu

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引用次数: 0

摘要

我们提出了一种pBiBn型-Ⅱ超晶格（T2SL）长波红外探测器的性能优化。通过数值模拟，我们研究了器件结构参数（如掺杂水平和层厚）的变化如何影响pBiBn长波红外探测器的电学性能，包括能带和暗电流密度。基于半导体物理，包括能带结构和耗尽区，我们分析和解释了这些效应的潜在机制。结果，我们确定了一组最优的器件结构参数。设计的长波红外探测器采用了双阻挡层，有效地降低了暗电流。仿真结果表明，优化后的InAs/GaSb双势垒长波红外探测器，吸收层T2SL带隙为0.0972 eV，在77 K、Vbi= -100 mV条件下，暗电流密度可达到1.27×10−4 A/cm2，吸收层侧耗尽带宽度几乎为零。

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Simulation-based optimization of dark current influenced by device parameters in InAs/GaSb LWIR detectors

We presented the performance optimization of a pBiBn type-Ⅱ superlattice (T2SL) long-wavelength infrared detector. Through numerical simulations, we investigated how changes in device structure parameters (such as doping levels and layer thickness) affect electrical properties, including the energy band and dark current density of the pBiBn long-wavelength infrared detector. Based on semiconductor physics, including energy band structure and depletion region, we analyzed and explained the underlying mechanisms of these effects. As a result, we identified a set of optimal device structure parameters. The designed long-wavelength infrared detector incorporates two barriers, which effectively reduce the dark current. Simulation results show that the dark current density of our optimized InAs/GaSb double-barrier long-wavelength infrared detector, with an absorber layer T2SL bandgap of 0.0972 eV, can reach 1.27×10⁻⁴ A/cm² at 77 K and V_bi= -100 mV, with the depletion zone width on the absorber layer side reduced to nearly zero.

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来源期刊

Optics and Laser Technology 物理-光学

CiteScore

8.50

自引率

10.00%

发文量

1060

审稿时长

3.4 months

期刊介绍： Optics & Laser Technology aims to provide a vehicle for the publication of a broad range of high quality research and review papers in those fields of scientific and engineering research appertaining to the development and application of the technology of optics and lasers. Papers describing original work in these areas are submitted to rigorous refereeing prior to acceptance for publication. The scope of Optics & Laser Technology encompasses, but is not restricted to, the following areas: •development in all types of lasers •developments in optoelectronic devices and photonics •developments in new photonics and optical concepts •developments in conventional optics, optical instruments and components •techniques of optical metrology, including interferometry and optical fibre sensors •LIDAR and other non-contact optical measurement techniques, including optical methods in heat and fluid flow •applications of lasers to materials processing, optical NDT display (including holography) and optical communication •research and development in the field of laser safety including studies of hazards resulting from the applications of lasers (laser safety, hazards of laser fume) •developments in optical computing and optical information processing •developments in new optical materials •developments in new optical characterization methods and techniques •developments in quantum optics •developments in light assisted micro and nanofabrication methods and techniques •developments in nanophotonics and biophotonics •developments in imaging processing and systems