A physics-based electromigration model for advanced interconnects

Electromigration (EM) prediction is becoming more significant for advanced back-end-of-line. In this work, we propose a physics-based EM model to achieve the high-accuracy and high-efficiency assessment for time-to-failure (TTF). The void evolution is considered during the EM degradation which includes the resistivity model, temperature model and activation energy correction model. The proposed model enables to depict the resistance degradation curves over time which agrees well with the experiment data. The influence of dimension, grain size, temperature, and current density on TTF of interconnects can be analyzed by the model, showing a potential application for fast EM prediction in high-density integration, especially for the advanced interconnects.