基于栅极电压振铃频率的IGBT模块焊线老化监测方法

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-07-10 DOI:10.1016/j.microrel.2025.115842

Mingxing Du, Jinlin Zhou, Jianxiong Yang, Haiqing Gu

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引用次数: 0

摘要

对电源变换器中IGBT模块进行老化监测，不仅能有效提高系统运行可靠性，还能显著降低维护成本。本文提出了一种基于导通栅极电压振铃频率特性的IGBT模块键合线老化监测新方法。本文首先根据IGBT模块的导通特性和等效电路模型，系统分析了导通栅极电压振铃产生的原因，并指出振铃频率可以作为反映键合线老化的指标。然后，在降压变换器试验台上对所提出的监测策略进行了实验验证，综合分析了直流链路电压变化、栅极电阻选择和结温波动对运行的影响。最后，本文提出了一种基于门振铃频率阈值分析的键合线劣化监测方案。实验结果表明，IGBT模块栅极米勒平台处的电压环振频率随着键合线的老化而降低。该方法是非侵入性的，并且使用设定的阈值实现结温的解耦。

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Monitoring method for bond wire aging in IGBT modules based on gate voltage ringing frequency

Aging monitoring of IGBT modules in power converters not only effectively improves system operational reliability, but also significantly reduces maintenance costs. This paper proposes a novel method for monitoring bond wire aging in IGBT modules based on the ringing frequency characteristics of the turn-on gate voltage. Initially, based on the turn-on characteristics of IGBT module and equivalent circuit model, this paper systematically analyzes the reasons for turn-on gate voltage ringing, and points out that the ringing frequency can be used as an indicator to reflect the aging of bond wires. Then, experimental validation of the proposed monitoring strategy was conducted on a buck converter testbed, with comprehensive analysis of operational impacts induced by DC-link voltage variations, gate resistance selection, and junction temperature fluctuations. Finally, this work presents a bond wire degradation monitoring scheme based on gate ringing frequency threshold analysis. The experimental results show that the voltage ringing frequency at the gate Miller plateau of the IGBT module decreases with the aging of the bond wires. The method is non-invasive, and achieves decoupling of the junction temperature using a set threshold.

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.