机电耦合对Sn3.0Ag0.5Cu焊点电学性能及微空洞演变的影响

IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Weiqi Guo , Peng Liu , Yinghao Bi , Shuaifeng Zhao , Ping Wu
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引用次数: 0

摘要

系统研究了Sn3.0Ag0.5Cu焊点在机电耦合加载条件下的微观组织和内部空洞的演变。实验结果表明,在1.5 × 104 A cm−2的电载荷下,焊点电阻表现出最初的稳定,随后逐渐增加,直到405 h时通过熔化和开路形成灾难性失效。这一现象伴随着Cu的加速溶解,导致大量金属间化合物的形成和垂直于电流方向的显着空隙生长。然而,在施加5n力和1.5 × 104 A cm−2电流密度的机电耦合条件下,焊点微观结构表现出显著的稳定性,空洞体积变化保持在1%以下。这种增强的稳定性归因于外部应力梯度有效地抵消了电子风力,从而抑制了原子迁移。这些发现为施加应力对焊点可靠性的有益影响提供了新的见解,提出了提高焊点长期性能的新方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of electro-mechanical coupling on the electrical performance and microvoid evolution of Sn3.0Ag0.5Cu solder joint
The evolution of microstructure and internal voids in Sn3.0Ag0.5Cu solder joints under electro-mechanical coupling loading conditions was systematically investigated. Experimental results revealed that under electrical loading (1.5 × 104 A cm−2), the solder joint resistance exhibited initial stability followed by a progressive increase until catastrophic failure through melting and open-circuit formation at 405 h. This phenomenon was accompanied by accelerated Cu dissolution, leading to extensive intermetallic compound formation and significant void growth perpendicular to the current direction. However, under electro-mechanical coupling conditions with an applied force of 5 N and current density of 1.5 × 104 A cm−2, the solder joint microstructure demonstrated remarkable stability, with void volume variations remaining below 1 %. This enhanced stability was attributed to the external stress gradient effectively counteracting the electron wind force, thus suppressing atomic migration. These findings provide new insights into the beneficial effects of applied stress on solder joint reliability, suggesting a novel approach for enhancing long-term solder joint performance.
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来源期刊
Microelectronics Reliability
Microelectronics Reliability 工程技术-工程:电子与电气
CiteScore
3.30
自引率
12.50%
发文量
342
审稿时长
68 days
期刊介绍: Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
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