Ali Obies Muhsen Almayyali , Sarab J. Musa , Hamad Rahman Jappor , Samah Al-Qaisi , Saad Bin-Omran , Rabah Khenata
{"title":"新2D Janus MXI (M=Cd, Zn)的预测X=Br, Cl)单层膜具有优异的电子,光学和光催化性能,用于水分解应用","authors":"Ali Obies Muhsen Almayyali , Sarab J. Musa , Hamad Rahman Jappor , Samah Al-Qaisi , Saad Bin-Omran , Rabah Khenata","doi":"10.1016/j.mssp.2025.109834","DOIUrl":null,"url":null,"abstract":"<div><div>Recently, metal halides have emerged as an intriguing family of two-dimensional (2D) materials, attracting significant interest for their potential in next-generation electronic and optoelectronic applications. In this study, we employ density functional theory (DFT) calculations to design and comprehensively investigate the structural, electronic, optical, and photocatalytic properties of four new Janus monolayers: ZnBrI, ZnClI, CdBrI, and CdClI. Our results reveal that these monolayers exhibit both dynamic and thermal stability, as confirmed through ab initio molecular dynamic simulations, cohesive energy calculations, and phonon dispersion analyses. The band structures of the MXI (M = Cd, Zn; X = Br, Cl) monolayers were also predicated employing DFT with Hubbard U corrections (DFT + U). The computed band gaps show that the ZnBrI and ZnClI monolayers possess indirect bandgaps of 2.18/2.18 eV and 2.09/2.10 eV, respectively, as calculated with the PBE/PBE + U methods, while. In comparison, the HSE06 functional yields larger bandgaps of 3.07 eV and 2.99 eV, respectively. Conversely, the CdBrI and CdClI monolayers exhibit direct bandgaps of 2.52/2.53 eV and 2.37/2.37 eV, respectively, using PBE/PBE + U, while the HSE06 functional results in bandgaps of 3.91 eV and 2.73 eV, respectively. Notably, these monolayers exhibit remarkable absorption coefficients in the ultraviolet region, reaching up to 10<sup>5</sup> cm<sup>−1</sup>, indicating strong light-harvesting capabilities. CdBrI and CdClI monolayers demonstrate optimal band alignments for water redox reactions, making them excellent candidates for effective water-splitting photocatalysts. Overall, our results highlight transition metal halide monolayers as promising materials for advanced optoelectronic devices, high-performance solar cells, and sustainable energy applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"199 ","pages":"Article 109834"},"PeriodicalIF":4.6000,"publicationDate":"2025-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Prediction of new 2D Janus MXI (M=Cd, Zn; X=Br, Cl) monolayers with excellent electronic, optical, and photocatalytic properties for water-splitting applications\",\"authors\":\"Ali Obies Muhsen Almayyali , Sarab J. Musa , Hamad Rahman Jappor , Samah Al-Qaisi , Saad Bin-Omran , Rabah Khenata\",\"doi\":\"10.1016/j.mssp.2025.109834\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Recently, metal halides have emerged as an intriguing family of two-dimensional (2D) materials, attracting significant interest for their potential in next-generation electronic and optoelectronic applications. In this study, we employ density functional theory (DFT) calculations to design and comprehensively investigate the structural, electronic, optical, and photocatalytic properties of four new Janus monolayers: ZnBrI, ZnClI, CdBrI, and CdClI. Our results reveal that these monolayers exhibit both dynamic and thermal stability, as confirmed through ab initio molecular dynamic simulations, cohesive energy calculations, and phonon dispersion analyses. The band structures of the MXI (M = Cd, Zn; X = Br, Cl) monolayers were also predicated employing DFT with Hubbard U corrections (DFT + U). The computed band gaps show that the ZnBrI and ZnClI monolayers possess indirect bandgaps of 2.18/2.18 eV and 2.09/2.10 eV, respectively, as calculated with the PBE/PBE + U methods, while. In comparison, the HSE06 functional yields larger bandgaps of 3.07 eV and 2.99 eV, respectively. Conversely, the CdBrI and CdClI monolayers exhibit direct bandgaps of 2.52/2.53 eV and 2.37/2.37 eV, respectively, using PBE/PBE + U, while the HSE06 functional results in bandgaps of 3.91 eV and 2.73 eV, respectively. Notably, these monolayers exhibit remarkable absorption coefficients in the ultraviolet region, reaching up to 10<sup>5</sup> cm<sup>−1</sup>, indicating strong light-harvesting capabilities. CdBrI and CdClI monolayers demonstrate optimal band alignments for water redox reactions, making them excellent candidates for effective water-splitting photocatalysts. Overall, our results highlight transition metal halide monolayers as promising materials for advanced optoelectronic devices, high-performance solar cells, and sustainable energy applications.</div></div>\",\"PeriodicalId\":18240,\"journal\":{\"name\":\"Materials Science in Semiconductor Processing\",\"volume\":\"199 \",\"pages\":\"Article 109834\"},\"PeriodicalIF\":4.6000,\"publicationDate\":\"2025-07-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science in Semiconductor Processing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1369800125005712\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125005712","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Prediction of new 2D Janus MXI (M=Cd, Zn; X=Br, Cl) monolayers with excellent electronic, optical, and photocatalytic properties for water-splitting applications
Recently, metal halides have emerged as an intriguing family of two-dimensional (2D) materials, attracting significant interest for their potential in next-generation electronic and optoelectronic applications. In this study, we employ density functional theory (DFT) calculations to design and comprehensively investigate the structural, electronic, optical, and photocatalytic properties of four new Janus monolayers: ZnBrI, ZnClI, CdBrI, and CdClI. Our results reveal that these monolayers exhibit both dynamic and thermal stability, as confirmed through ab initio molecular dynamic simulations, cohesive energy calculations, and phonon dispersion analyses. The band structures of the MXI (M = Cd, Zn; X = Br, Cl) monolayers were also predicated employing DFT with Hubbard U corrections (DFT + U). The computed band gaps show that the ZnBrI and ZnClI monolayers possess indirect bandgaps of 2.18/2.18 eV and 2.09/2.10 eV, respectively, as calculated with the PBE/PBE + U methods, while. In comparison, the HSE06 functional yields larger bandgaps of 3.07 eV and 2.99 eV, respectively. Conversely, the CdBrI and CdClI monolayers exhibit direct bandgaps of 2.52/2.53 eV and 2.37/2.37 eV, respectively, using PBE/PBE + U, while the HSE06 functional results in bandgaps of 3.91 eV and 2.73 eV, respectively. Notably, these monolayers exhibit remarkable absorption coefficients in the ultraviolet region, reaching up to 105 cm−1, indicating strong light-harvesting capabilities. CdBrI and CdClI monolayers demonstrate optimal band alignments for water redox reactions, making them excellent candidates for effective water-splitting photocatalysts. Overall, our results highlight transition metal halide monolayers as promising materials for advanced optoelectronic devices, high-performance solar cells, and sustainable energy applications.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.