2.5微米厚α相钽薄膜表面微加工的各向异性反应离子刻蚀

IF 2.8 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Micro and Nano Engineering Pub Date : 2025-06-23 DOI:10.1016/j.mne.2025.100305

Md Shariful Islam, Longchang Ni, Maarten P. de Boer

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引用次数: 0

摘要

为了实现厚度大于1 μm的钽（Ta）薄膜的高各向异性，对其蚀刻参数进行了研究。探测到的气体是氩（Ar）、四氟化碳（CF4）和氧。研究了组分、流量、压力和功率的影响。光学发射光谱用于解释蚀刻结果。虽然氧的加入对各向异性有不利影响，但在较低的压力下，各向异性得到改善。发现Ar:CF4比为5:1可以实现良好的蚀刻速率和侧壁钝化。随着功率的增加，腐蚀速率增加，但各向异性没有明显的增强。采用常见的平行板RIE结构和常见的低毒性气体，在最佳的Ar / CF4比、功率和压力下，获得了2.5 μm厚α-Ta膜的垂直侧壁。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Anisotropic reactive ion etching of 2.5 micrometer thick alpha phase tantalum films for surface micromachining

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Anisotropic reactive ion etching of 2.5 micrometer thick alpha phase tantalum films for surface micromachining

An etch parameter study is conducted with the objective of achieving high anisotropy for tantalum (Ta) thin films of more than 1 μm in thickness. The gases explored are Argon (Ar), carbon tetrafluoride (CF₄) and oxygen. The effects of composition, flow, pressure, and power are investigated. Optical emission spectroscopy is used to interpret the etch results. While the addition of oxygen adversely affects anisotropy, it is improved with lower pressure. An Ar:CF₄ ratio of 5:1 is found to enable good etch rate and sidewall passivation. As power increases, the etch rate increases but there is no observable enhancement in anisotropy. Using a common parallel-plate RIE configuration with common low toxicity gases, a vertical sidewall is achieved for 2.5 μm thick