具有频率特定波速控制的毫米波驻波振荡器显示f级效应

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE
Wei-Yu Lin;Jun-Chau Chien
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引用次数: 0

摘要

当使用低耦合系数的小线圈时,由于三次谐波槽阻抗有限,实现具有60 GHz以上变压器反馈的双谐振f类振荡器面临重大挑战。为了解决这些限制并利用f类操作的相位噪声优势,本文介绍了一种驻波振荡器(SWO)拓扑结构,其特点是片上多频带在线传输(t-line)谐振器加载了谐波调谐的开存根。所提出的设计增强了三次谐波共振,同时促进了振荡频率的精确对准。采用台积电的65纳米LP技术实现了三个压控振荡器(VCO),结果表明,与传统的SWO和基于变压器的f类VCO相比,所提出的f类半波长SWO在1 mhz偏置下分别实现了3.1和6.4 dB的相位噪声改善。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Millimeter-Wave Standing-Wave Oscillator With Frequency-Specific Wave-Velocity Control Demonstrating Class-F Effects
Implementing dual-resonance class-F oscillators with transformer feedback beyond 60 GHz poses significant challenges due to the limited third-harmonic tank impedance when using small coils with low coupling factors. To address these limitations and leverage the phase noise advantages of class-F operation, this letter introduces a standing-wave oscillator (SWO) topology featuring an on-chip multiband transmission-line (t-line) resonator loaded with harmonically tuned open stubs. The proposed design enhances third-harmonic resonance while facilitating precise alignment of the oscillation frequencies. Three voltage-controlled oscillators (VCOs) were implemented using TSMC’s 65-nm LP technology, demonstrating that the proposed class-F half-wavelength SWO achieves phase noise improvements of 3.1 and 6.4 dB at a 1-MHz offset compared to conventional SWO and transformer-based class-F VCO, respectively.
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来源期刊
IEEE Solid-State Circuits Letters
IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering
CiteScore
4.30
自引率
3.70%
发文量
52
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