{"title":"基于残差移位技术的6.2b-ENOB 2.5 GS/s flash - vco邻域ADC","authors":"Sungjin Kim;Jeonghyun Lee;Yoonse Cho;Jintae Kim;Jaehyouk Choi;Heein Yoon","doi":"10.1109/LSSC.2025.3578546","DOIUrl":null,"url":null,"abstract":"This letter presents a 7-bit pipelined subranging ADC that integrates a 3-bit flash ADC with a ring VCO-based quantizer. A resistor-ladder-based residue shifter (RLRS) replaces traditional residue amplifiers, efficiently shifting the residue voltage into the most linear region of the <inline-formula> <tex-math>$K_{\\textrm {VCO}}$ </tex-math></inline-formula>, thereby eliminating the need for post-linearity calibration. Fabricated in a 28-nm FDSOI process, the ADC occupies an area of 0.009 mm2 and achieves an SNDR of 39.26 dB and an SFDR of 48.01 dB at 2.5 GS/s, while consuming 6.5 mW of power. This results in a Walden FOM of 34.6 fJ/conversion step.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":"8 ","pages":"177-180"},"PeriodicalIF":2.2000,"publicationDate":"2025-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 6.2b-ENOB 2.5 GS/s Flash-and-VCO-Based Subranging ADC Using a Residue Shifting Technique\",\"authors\":\"Sungjin Kim;Jeonghyun Lee;Yoonse Cho;Jintae Kim;Jaehyouk Choi;Heein Yoon\",\"doi\":\"10.1109/LSSC.2025.3578546\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This letter presents a 7-bit pipelined subranging ADC that integrates a 3-bit flash ADC with a ring VCO-based quantizer. A resistor-ladder-based residue shifter (RLRS) replaces traditional residue amplifiers, efficiently shifting the residue voltage into the most linear region of the <inline-formula> <tex-math>$K_{\\\\textrm {VCO}}$ </tex-math></inline-formula>, thereby eliminating the need for post-linearity calibration. Fabricated in a 28-nm FDSOI process, the ADC occupies an area of 0.009 mm2 and achieves an SNDR of 39.26 dB and an SFDR of 48.01 dB at 2.5 GS/s, while consuming 6.5 mW of power. This results in a Walden FOM of 34.6 fJ/conversion step.\",\"PeriodicalId\":13032,\"journal\":{\"name\":\"IEEE Solid-State Circuits Letters\",\"volume\":\"8 \",\"pages\":\"177-180\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2025-06-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Solid-State Circuits Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/11030801/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Solid-State Circuits Letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/11030801/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
A 6.2b-ENOB 2.5 GS/s Flash-and-VCO-Based Subranging ADC Using a Residue Shifting Technique
This letter presents a 7-bit pipelined subranging ADC that integrates a 3-bit flash ADC with a ring VCO-based quantizer. A resistor-ladder-based residue shifter (RLRS) replaces traditional residue amplifiers, efficiently shifting the residue voltage into the most linear region of the $K_{\textrm {VCO}}$ , thereby eliminating the need for post-linearity calibration. Fabricated in a 28-nm FDSOI process, the ADC occupies an area of 0.009 mm2 and achieves an SNDR of 39.26 dB and an SFDR of 48.01 dB at 2.5 GS/s, while consuming 6.5 mW of power. This results in a Walden FOM of 34.6 fJ/conversion step.