基于芳香烃衍生物†的三维窄带金属晶体

IF 5.1 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Misako Ikeda, Yoshiki Sasaki, Yoshino Fujikawa, Shigeki Mori, Kensuke Konishi, Keishi Ohara, Haruhiko Dekura, Hiromichi Toyota, Masayoshi Takase, Ami Mi Shirai, Yuta Murotani, Ryusuke Matsunaga and Toshio Naito
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引用次数: 0

摘要

分子导体的性质和晶体结构取决于其由共轭分子组成的平面部分之间的分子间相互作用。这种相互作用经常产生低维带结构,易受扰动并失去导电性。为了扩展柱内和柱间的相互作用,通常在组成分子的外围引入杂原子,如硫原子。然而,这种策略不可避免地会遇到困难,因为随着杂原子数量和分子量的增加,这种分子的合成会越来越困难,而它们仍然会产生高度各向异性的导体。本文报道了一种新合成的电荷转移配合物(EtHAC)2I3的扩展分子间相互作用模式,该配合物在其融合的芳香环HAC周围包含十个乙基。(EtHAC)2I3晶体包含稳定的EtHAC自由基阳离子柱,柱间通过Et-Et接触相互作用。理论计算表明,分子内Et-HAC和分子间Et-Et相互作用能够形成三维(3D) EtHAC网络。此外,通过Et-I触点的电荷转移相互作用导致载流子掺杂到EtHAC网络中。这些效应结合在一起产生稳定的3D金属基态,其高3D导电性(约10-2500 S cm−1)低至~ 2 K。计算的能带结构和偏振反射光谱进一步证实了(EtHAC)2I3独特的金属性质,均显示出三维金属特征。(EtHAC)2I3的电子自旋共振谱表明,高移动的未配对电子表现为具有长松弛时间的自由电子。这些发现为开发分子导体和磁铁提供了一种不同的策略。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Metallic crystals with a three-dimensional narrow band based on an aromatic hydrocarbon derivative†

Metallic crystals with a three-dimensional narrow band based on an aromatic hydrocarbon derivative†

The properties and crystal structures of molecular conductors depend on the intermolecular interactions between their planar parts each comprising of a conjugated molecule. Such interactions frequently produce low-dimensional band structures that are susceptible to perturbation and to lose the electrical conductivity. To extend the intra- and intercolumnar interactions, heteroatoms such as chalcogen atoms are often introduced at the periphery of the constituent molecules. Yet this strategy inevitably encounters difficulties, as such molecules would be more and more difficult to synthesize with increasing the number of heteroatoms and the molecular weights, while they would still produce highly anisotropic conductors. Herein, we report an extended intermolecular interaction pattern in a newly synthesized charge-transfer complex (EtHAC)2I3, which includes ten ethyl groups around the periphery of its fused aromatic rings HAC. The (EtHAC)2I3 crystal contains columns of stable EtHAC radical cations with intercolumnar interactions by Et–Et contacts. Theoretical calculations indicate that intramolecular Et-HAC and intermolecular Et–Et interactions enable formation of three-dimensional (3D) EtHAC network. Additionally, charge-transfer interactions via Et–I contacts lead to carrier doping into the EtHAC network. These effects are combined to produce a stable 3D metallic ground state, accounting for their high 3D electrical conductivity (ca. 10–2500 S cm−1) down to ∼2 K. The unique metallic properties of (EtHAC)2I3 are further corroborated by the calculated band structures and polarized reflectance spectra, both indicating 3D metallic characteristics. The electron spin resonance spectra of (EtHAC)2I3 suggest that the highly mobile unpaired electrons behave as if they are free electrons with long relaxation times. These findings add a different strategy to develop the molecular conductors and magnets.

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来源期刊
Journal of Materials Chemistry C
Journal of Materials Chemistry C MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
10.80
自引率
6.20%
发文量
1468
期刊介绍: The Journal of Materials Chemistry is divided into three distinct sections, A, B, and C, each catering to specific applications of the materials under study: Journal of Materials Chemistry A focuses primarily on materials intended for applications in energy and sustainability. Journal of Materials Chemistry B specializes in materials designed for applications in biology and medicine. Journal of Materials Chemistry C is dedicated to materials suitable for applications in optical, magnetic, and electronic devices. Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive. Bioelectronics Conductors Detectors Dielectrics Displays Ferroelectrics Lasers LEDs Lighting Liquid crystals Memory Metamaterials Multiferroics Photonics Photovoltaics Semiconductors Sensors Single molecule conductors Spintronics Superconductors Thermoelectrics Topological insulators Transistors
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