一种由Mott记忆电阻器实现的无源可扩展高阶神经形态电路

IF 2.7 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE
Zikang Lin;Xiaohui Wu;Shujing Zhao;Weihua Liu;Xin Li;Li Geng;Chuanyu Han
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引用次数: 0

摘要

在这项研究中,VO2 Mott记忆电阻器已经成功制造,导致无源和可扩展的高阶神经电路的建议。该电路由两个耦合的vo2mott忆阻器、两个电阻器和三个电容器组成。所提出的高阶神经回路显示了11种不同的类似生物神经元的放电行为,以及可控的突发放电模式。通过改变电容值和电阻值,可以调节脉冲内的尖峰、尖峰间间隔(ISI)和脉冲间的静止间隔。此外,该电路不需要偏置电源或电感,从而增强了其可扩展性。该设计不仅提高了电路互连性,而且有效降低了功耗,为尖峰神经网络(snn)的发展提供了坚实的基础。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Passive and Scalable High-Order Neuromorphic Circuit Enabled by Mott Memristors
In this study, VO2 Mott memristors have been successfully fabricated, leading to the proposal of a passive and scalable high-order neural circuit. This circuit consists of two coupled VO2 Mott memristors, two resistors, and three capacitors. The proposed high-order neural circuit demonstrates 11 distinct firing behaviors similar to those of biological neurons, along with controllable burst firing patterns. The spikes, interspike interval (ISI) within a burst, and the quiescence interval between bursts can be adjusted by varying the capacitance and resistance values. In addition, this circuit operates without the need for a bias supply or inductors, enhancing its scalability. This design not only improves circuit interconnection but also effectively reduces power consumption, providing a solid foundation for the development of spiking neural networks (SNNs).
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来源期刊
CiteScore
5.00
自引率
4.20%
发文量
11
审稿时长
13 weeks
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