MEMS毫米波微传输线可靠性分析

IF 3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Components, Packaging and Manufacturing Technology Pub Date : 2025-04-28 DOI:10.1109/TCPMT.2025.3563936

Lifang Zhao;Kaixue Ma;Yongqiang Wang

{"title":"MEMS毫米波微传输线可靠性分析","authors":"Lifang Zhao;Kaixue Ma;Yongqiang Wang","doi":"10.1109/TCPMT.2025.3563936","DOIUrl":null,"url":null,"abstract":"The millimeter-wave micro-transmission line with GSG turning point is designed and prepared in this letter. The circuit breaking problem occurs in the initial measurement. Through the thermal stress analysis, material interface matching, and process improvement, the tested insertion loss at 40 GHz is 0.2 dB/cm, and the reflection loss is better than 17.32 dB. After three thermal reflow at <inline-formula> <tex-math>$220~^{\\circ }$ </tex-math></inline-formula>C and 500 h high-temperature storage at <inline-formula> <tex-math>$150~^{\\circ }$ </tex-math></inline-formula>C, there is no obvious difference between the performance tests before and after. It shows that the structure stability of the millimeter wave micro-transmission line is very good, which provides a reference solution for the key technical problems in the preparation process of micro-transmission line and reliability verification.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 6","pages":"1269-1274"},"PeriodicalIF":3.0000,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Reliability Analysis of MEMS Millimeter-Wave Micro-Transmission Line\",\"authors\":\"Lifang Zhao;Kaixue Ma;Yongqiang Wang\",\"doi\":\"10.1109/TCPMT.2025.3563936\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The millimeter-wave micro-transmission line with GSG turning point is designed and prepared in this letter. The circuit breaking problem occurs in the initial measurement. Through the thermal stress analysis, material interface matching, and process improvement, the tested insertion loss at 40 GHz is 0.2 dB/cm, and the reflection loss is better than 17.32 dB. After three thermal reflow at <inline-formula> <tex-math>$220~^{\\\\circ }$ </tex-math></inline-formula>C and 500 h high-temperature storage at <inline-formula> <tex-math>$150~^{\\\\circ }$ </tex-math></inline-formula>C, there is no obvious difference between the performance tests before and after. It shows that the structure stability of the millimeter wave micro-transmission line is very good, which provides a reference solution for the key technical problems in the preparation process of micro-transmission line and reliability verification.\",\"PeriodicalId\":13085,\"journal\":{\"name\":\"IEEE Transactions on Components, Packaging and Manufacturing Technology\",\"volume\":\"15 6\",\"pages\":\"1269-1274\"},\"PeriodicalIF\":3.0000,\"publicationDate\":\"2025-04-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Components, Packaging and Manufacturing Technology\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10979679/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Components, Packaging and Manufacturing Technology","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10979679/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

本文设计并制作了具有GSG拐点的毫米波微传输线。在初始测量中会出现断路问题。通过热应力分析、材料界面匹配和工艺改进，测试的40 GHz插入损耗为0.2 dB/cm，反射损耗优于17.32 dB。经过$220~^{\circ}$ C三次热回流和$150~^{\circ}$ C 500 h的高温贮存，前后性能测试无明显差异。结果表明，该毫米波微传输线的结构稳定性非常好，为微传输线制备过程中的关键技术问题和可靠性验证提供了参考解决方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Reliability Analysis of MEMS Millimeter-Wave Micro-Transmission Line

The millimeter-wave micro-transmission line with GSG turning point is designed and prepared in this letter. The circuit breaking problem occurs in the initial measurement. Through the thermal stress analysis, material interface matching, and process improvement, the tested insertion loss at 40 GHz is 0.2 dB/cm, and the reflection loss is better than 17.32 dB. After three thermal reflow at

$220~^{\circ }$

C and 500 h high-temperature storage at

$150~^{\circ }$

C, there is no obvious difference between the performance tests before and after. It shows that the structure stability of the millimeter wave micro-transmission line is very good, which provides a reference solution for the key technical problems in the preparation process of micro-transmission line and reliability verification.

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来源期刊

IEEE Transactions on Components, Packaging and Manufacturing Technology ENGINEERING, MANUFACTURING-ENGINEERING, ELECTRICAL & ELECTRONIC

CiteScore

4.70

自引率

13.60%

发文量

203

审稿时长

3 months

期刊介绍： IEEE Transactions on Components, Packaging, and Manufacturing Technology publishes research and application articles on modeling, design, building blocks, technical infrastructure, and analysis underpinning electronic, photonic and MEMS packaging, in addition to new developments in passive components, electrical contacts and connectors, thermal management, and device reliability; as well as the manufacture of electronics parts and assemblies, with broad coverage of design, factory modeling, assembly methods, quality, product robustness, and design-for-environment.