MOCVD生长不同基层gaas基hbt电流增益和导通电压的温度依赖性

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-06-16 DOI:10.1016/j.sse.2025.109180

Zhen Liu , ShuQing Deng , JianPing Liu , Yong Huang , Hui Yang

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引用次数: 0

摘要

研究了具有GaAs、InGaAs和GaAsSb基材层的GaAs基异质结双极晶体管的温度依赖性。以InGaAs为基底的HBT具有最佳的热稳定性，电流增益为Δβ/ΔT =−0.0828/K。利用该模型拟合1/β与1/T之间的关系，得到了发射基结的价带偏置（ΔEV）和基层的缺陷活化能（ΔEa）较低的Δβ/ΔT系数。此外，与具有GaAs基的HBT的1.075 V相比，具有较窄带隙的InGaAs基和GaAsSb基的HBT分别获得了较低的1.038 V和1.036 V的导通电压。

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Temperature-dependence of current gain and turn-on voltages of GaAs-based HBTs with different base layers grown by MOCVD

Temperature-dependence of GaAs-based heterojunction bipolar transistors with GaAs, InGaAs and GaAsSb base layers were investigated. HBT with InGaAs base was found to have the best thermal stability of current gain of Δβ/ΔT = −0.0828/K. Both valence-band offset (ΔE_V) of emitter–base junction and defects activation energy (ΔE_a) of base layer were accounted for the low Δβ/ΔT coefficient by fitting the relationship between 1/β and 1/T using a proposed model. In addition, lower turn-on voltages of 1.038 V and 1.036 V were extracted for HBTs with narrower bandgap InGaAs and GaAsSb bases, respectively, in contrast to 1.075 V in HBT with GaAs base.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.