基于贝叶斯优化的太阳能电池制造过程中硅片电阻控制方法

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Seungtae Lee , MyeongSeob Sim , Yoonmook Kang , Donghwan Kim , Hae-Seok Lee
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引用次数: 0

摘要

光伏(PV)技术随着效率的不断提高而不断发展,最近引入的具有超高效率电池的背接触架构以及预期向串联应用的转变导致了工业环境中每个过程优化的不断变化。然而,传统的工艺优化的试错方法既耗时又成本高,使其不适合现代制造业。作为替代方案,本文提出了一种基于机器学习的模型来预测氯氧磷(POCl3)掺杂过程中的薄片电阻。在评估的模型中,梯度增强模型的预测精度最高,R2值为0.955,均方根误差为9.43 Ω/sq,平均绝对百分比误差为4.60%。此外,采用特征重要性分析和SHapley加性解释(SHAP)来解释模型,证实预测与潜在的物理机制很好地一致。这一结果表明,数据驱动的机器学习模型可以提供基于理论和物理原理的过程洞察。使用贝叶斯优化,我们能够快速获得绝对偏差仅为0.1 Ω/sq至150 Ω/sq的工艺配方,从而在应用时实现更快,更准确的优化。所提出的方法可以促进光伏制造中智能工厂系统的发展,并可以扩展到半导体和薄膜加工中的更广泛应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Bayesian-optimization-based approach for sheet-resistance control in silicon wafers toward automated solar-cell manufacturing
Photovoltaic (PV) technology has been continuously evolving with increasing efficiency, and the recent introduction of back contact architectures with ultra-high efficiency cells and the expected shift to tandem applications have led to continuous changes in the optimization of each process in industrial environments. However, conventional trial-and-error approaches to process optimization are time-consuming and cost-intensive, making them impractical for modern manufacturing. As an alternative, this paper proposes a machine-learning-based model for predicting sheet resistance in phosphorus oxychloride (POCl3) doping processes. Among the models evaluated, the gradient boosting model exhibited the highest predictive accuracy, achieving an R2 value of 0.955, root-mean-square error of 9.43 Ω/sq, and mean absolute percentage error of 4.60 %. In addition, feature importance analysis and SHapley Additive exPlanations (SHAP) were employed to interpret the model, confirming that the predictions aligned well with the underlying physical mechanisms. This result suggests that data-driven machine-learning models can provide process insights grounded in theoretical and physical principles. Using Bayesian optimization, we were able to quickly obtain a process recipe with an absolute deviation of only 0.1 Ω/sq to 150 Ω/sq, which enabled faster and more accurate optimization when applied. The proposed methodology can facilitate the development of smart factory systems in PV manufacturing and can be extended to broader applications in semiconductor and thin-film processing.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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