Seungtae Lee , MyeongSeob Sim , Yoonmook Kang , Donghwan Kim , Hae-Seok Lee
{"title":"基于贝叶斯优化的太阳能电池制造过程中硅片电阻控制方法","authors":"Seungtae Lee , MyeongSeob Sim , Yoonmook Kang , Donghwan Kim , Hae-Seok Lee","doi":"10.1016/j.mssp.2025.109759","DOIUrl":null,"url":null,"abstract":"<div><div>Photovoltaic (PV) technology has been continuously evolving with increasing efficiency, and the recent introduction of back contact architectures with ultra-high efficiency cells and the expected shift to tandem applications have led to continuous changes in the optimization of each process in industrial environments. However, conventional trial-and-error approaches to process optimization are time-consuming and cost-intensive, making them impractical for modern manufacturing. As an alternative, this paper proposes a machine-learning-based model for predicting sheet resistance in phosphorus oxychloride (POCl<sub>3</sub>) doping processes. Among the models evaluated, the gradient boosting model exhibited the highest predictive accuracy, achieving an R<sup>2</sup> value of 0.955, root-mean-square error of 9.43 Ω/sq, and mean absolute percentage error of 4.60 %. In addition, feature importance analysis and SHapley Additive exPlanations (SHAP) were employed to interpret the model, confirming that the predictions aligned well with the underlying physical mechanisms. This result suggests that data-driven machine-learning models can provide process insights grounded in theoretical and physical principles. Using Bayesian optimization, we were able to quickly obtain a process recipe with an absolute deviation of only 0.1 Ω/sq to 150 Ω/sq, which enabled faster and more accurate optimization when applied. The proposed methodology can facilitate the development of smart factory systems in PV manufacturing and can be extended to broader applications in semiconductor and thin-film processing.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"198 ","pages":"Article 109759"},"PeriodicalIF":4.6000,"publicationDate":"2025-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Bayesian-optimization-based approach for sheet-resistance control in silicon wafers toward automated solar-cell manufacturing\",\"authors\":\"Seungtae Lee , MyeongSeob Sim , Yoonmook Kang , Donghwan Kim , Hae-Seok Lee\",\"doi\":\"10.1016/j.mssp.2025.109759\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Photovoltaic (PV) technology has been continuously evolving with increasing efficiency, and the recent introduction of back contact architectures with ultra-high efficiency cells and the expected shift to tandem applications have led to continuous changes in the optimization of each process in industrial environments. However, conventional trial-and-error approaches to process optimization are time-consuming and cost-intensive, making them impractical for modern manufacturing. As an alternative, this paper proposes a machine-learning-based model for predicting sheet resistance in phosphorus oxychloride (POCl<sub>3</sub>) doping processes. Among the models evaluated, the gradient boosting model exhibited the highest predictive accuracy, achieving an R<sup>2</sup> value of 0.955, root-mean-square error of 9.43 Ω/sq, and mean absolute percentage error of 4.60 %. In addition, feature importance analysis and SHapley Additive exPlanations (SHAP) were employed to interpret the model, confirming that the predictions aligned well with the underlying physical mechanisms. This result suggests that data-driven machine-learning models can provide process insights grounded in theoretical and physical principles. Using Bayesian optimization, we were able to quickly obtain a process recipe with an absolute deviation of only 0.1 Ω/sq to 150 Ω/sq, which enabled faster and more accurate optimization when applied. The proposed methodology can facilitate the development of smart factory systems in PV manufacturing and can be extended to broader applications in semiconductor and thin-film processing.</div></div>\",\"PeriodicalId\":18240,\"journal\":{\"name\":\"Materials Science in Semiconductor Processing\",\"volume\":\"198 \",\"pages\":\"Article 109759\"},\"PeriodicalIF\":4.6000,\"publicationDate\":\"2025-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science in Semiconductor Processing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1369800125004962\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125004962","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Bayesian-optimization-based approach for sheet-resistance control in silicon wafers toward automated solar-cell manufacturing
Photovoltaic (PV) technology has been continuously evolving with increasing efficiency, and the recent introduction of back contact architectures with ultra-high efficiency cells and the expected shift to tandem applications have led to continuous changes in the optimization of each process in industrial environments. However, conventional trial-and-error approaches to process optimization are time-consuming and cost-intensive, making them impractical for modern manufacturing. As an alternative, this paper proposes a machine-learning-based model for predicting sheet resistance in phosphorus oxychloride (POCl3) doping processes. Among the models evaluated, the gradient boosting model exhibited the highest predictive accuracy, achieving an R2 value of 0.955, root-mean-square error of 9.43 Ω/sq, and mean absolute percentage error of 4.60 %. In addition, feature importance analysis and SHapley Additive exPlanations (SHAP) were employed to interpret the model, confirming that the predictions aligned well with the underlying physical mechanisms. This result suggests that data-driven machine-learning models can provide process insights grounded in theoretical and physical principles. Using Bayesian optimization, we were able to quickly obtain a process recipe with an absolute deviation of only 0.1 Ω/sq to 150 Ω/sq, which enabled faster and more accurate optimization when applied. The proposed methodology can facilitate the development of smart factory systems in PV manufacturing and can be extended to broader applications in semiconductor and thin-film processing.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.