Two 7–13-GHz GaAs-SiGe Four–Channel Beamforming Chiplets With/Without Metallic Interlayer Shields

This letter presents two 7–13-GHz GaAs-SiGe four-channel beamforming chiplets to minimize the chip area. The chips integrate GaAs-based power amplifiers (PAs) and low-noise amplifiers (LNAs) with silicon-based phase and amplitude control modules using gold bumps. To mitigate coupling between the metal patterns of the heterogeneous chips and avoid interference with beamforming performance, a metallic interlayer shield is introduced at the interface. This shield ensures effective integration and preserves the functionality and performance of both the compound and silicon-based components. The fabricated four-channel 3-D heterogeneous integrated radio-frequency front-end chips, using 0.25- $\mu $ m GaAs and 0.13- $\mu $ m SiGe BiCMOS processes, achieve 6-bit amplitude/phase control with 0.5 dB/5.625° resolution with power consumption of 3.6 W (TX) and 1.6 W (RX). The RMS amplitude and phase errors are <0.6> $\mathrm { OP_{1dB}}$ and −1.5-dBm RX IP1dB, with a compact total area of $4.1\times 3.05$ mm2.