基于瞬态电流法的陷阱对SiC MOSFET阈值电压影响的研究

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-03-12 DOI:10.1109/TDMR.2025.3569318

Zhuoming Liu;Qian Wen;Xianwei Meng;Shijie Pan;Chunsheng Guo;Shiwei Feng;Yamin Zhang;Meng Zhang

{"title":"基于瞬态电流法的陷阱对SiC MOSFET阈值电压影响的研究","authors":"Zhuoming Liu;Qian Wen;Xianwei Meng;Shijie Pan;Chunsheng Guo;Shiwei Feng;Yamin Zhang;Meng Zhang","doi":"10.1109/TDMR.2025.3569318","DOIUrl":null,"url":null,"abstract":"The threshold voltage shift issue caused by traps in silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) is studied based on transient current method. Experiment results show gate stress, drain stress, and temperature all contribute to threshold voltage shift, with the underlying cause of traps. To obtain physical characteristics of the traps, we test the drain current of the device after filling the traps and utilize a Bayesian iterative deconvolution algorithm to extract the time constants. To accurately explore the impact of traps on the current, we further process the time constant spectrum into a differential amplitude spectrum (DAS), which provides greater precision in addressing the issue of trap amplitudes. We also analyze the variation of trap time constants at different environmental temperatures, and extract the activation energies of the traps in conjunction with the Arrhenius equation. Ultimately, experiments discover two types of electron traps and hole traps.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 2","pages":"323-328"},"PeriodicalIF":2.3000,"publicationDate":"2025-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study of Trap Influence on Threshold Voltage of SiC MOSFET Based on Transient Current Method\",\"authors\":\"Zhuoming Liu;Qian Wen;Xianwei Meng;Shijie Pan;Chunsheng Guo;Shiwei Feng;Yamin Zhang;Meng Zhang\",\"doi\":\"10.1109/TDMR.2025.3569318\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The threshold voltage shift issue caused by traps in silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) is studied based on transient current method. Experiment results show gate stress, drain stress, and temperature all contribute to threshold voltage shift, with the underlying cause of traps. To obtain physical characteristics of the traps, we test the drain current of the device after filling the traps and utilize a Bayesian iterative deconvolution algorithm to extract the time constants. To accurately explore the impact of traps on the current, we further process the time constant spectrum into a differential amplitude spectrum (DAS), which provides greater precision in addressing the issue of trap amplitudes. We also analyze the variation of trap time constants at different environmental temperatures, and extract the activation energies of the traps in conjunction with the Arrhenius equation. Ultimately, experiments discover two types of electron traps and hole traps.\",\"PeriodicalId\":448,\"journal\":{\"name\":\"IEEE Transactions on Device and Materials Reliability\",\"volume\":\"25 2\",\"pages\":\"323-328\"},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2025-03-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Device and Materials Reliability\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/11002580/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Device and Materials Reliability","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11002580/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

基于瞬态电流法研究了碳化硅金属氧化物半导体场效应晶体管（SiC mosfet）中陷阱引起的阈值电压偏移问题。实验结果表明，栅极应力、漏极应力和温度都是导致阈值电压漂移的原因，其根本原因是陷阱。为了获得陷阱的物理特性，我们在填充陷阱后测试器件的漏极电流，并利用贝叶斯迭代反卷积算法提取时间常数。为了准确地探索陷阱对电流的影响，我们进一步将时间常数谱处理成差分振幅谱（DAS），这在解决陷阱振幅问题时提供了更高的精度。我们还分析了不同环境温度下陷阱时间常数的变化，并结合Arrhenius方程提取了陷阱的活化能。最后，实验发现了两种类型的电子陷阱和空穴陷阱。

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Study of Trap Influence on Threshold Voltage of SiC MOSFET Based on Transient Current Method

The threshold voltage shift issue caused by traps in silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) is studied based on transient current method. Experiment results show gate stress, drain stress, and temperature all contribute to threshold voltage shift, with the underlying cause of traps. To obtain physical characteristics of the traps, we test the drain current of the device after filling the traps and utilize a Bayesian iterative deconvolution algorithm to extract the time constants. To accurately explore the impact of traps on the current, we further process the time constant spectrum into a differential amplitude spectrum (DAS), which provides greater precision in addressing the issue of trap amplitudes. We also analyze the variation of trap time constants at different environmental temperatures, and extract the activation energies of the traps in conjunction with the Arrhenius equation. Ultimately, experiments discover two types of electron traps and hole traps.

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.