The Achievement of Pulse Laser Deposited Amorphous P-Type N-Doped Ga₂O₃ for Applying in Thin Film Transistor and Homojunction Diode

In this study, an amorphous p-type N-doped Ga2O3 thin film has been achieved using pulsed laser deposition and Ga2O3:GaN=1:1 (at%) mixed ceramic target. The bonding states of the films after nitrogen incorporation were investigated using X-ray photoelectron spectroscopy, which revealed the lattice oxygen sites substituted by nitrogen. Ultraviolet photoelectron spectroscopy analysis shows a p-type feature of N-doped Ga2O3 film and a weak n-type unintentional doped pure Ga2O3 film. The thin film transistors have been fabricated using pure and N-doped Ga2O3 films to further confirm their n-type and p-type conductive properties, respectively. The N-doped Ga2O3-based TFTs displays p-type characteristics with a field effect mobility of $2.13\times 10{^{\text {-3}}}$ cm2/V $\cdot $ s, an on/off ratio of $2.78\times 10{^{{4}}}$ and a sub-threshold swing of 0.15 V/dec. Finally, a full amorphous Ga2O3 films-based pn homojunction diode has been fulfilled and explored in detail, which displays a good rectifying characteristic with a rectification ratio of $1.46\times 10{^{{2}}}$ and an ideality factor of 5.19.