考虑高频振铃的IGBT变换器中键合线老化对DM EMI噪声的影响

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-03-07 DOI:10.1109/TDMR.2025.3548979

Sai Gao;Shaoxiang Wang;Jianxiong Yang;Mingxing Du

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引用次数: 0

摘要

本文研究了高频振铃作用下，键合线老化对igbt中差分模式电磁干扰（EMI）噪声发射的影响。本文以IGBT半桥模块组成的DC-DC降压变换器为例，从时域和频域分析了键合线升空对电磁干扰频谱的影响。本文解释了直流环节杂散电感与自由转二极管相互作用引起高频振荡的产生机理。研究表明，键合线升空通过影响IGBT的开关特性来改变DM EMI噪声发射。此外，在振铃过程中，抬升键合线数量的增加显著增强了共振频率及以上的DM EMI噪声发射。本研究结果为研究电力电子器件的老化效应及其对电磁干扰的影响提供了新的视角。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The Influence of Bond Wire Aging on DM EMI Noise in IGBT Converters Considering High-Frequency Ringing

This paper investigates the impact of bond wire aging on differential mode (DM) electromagnetic interference (EMI) noise emissions in IGBTs under the influence of high-frequency ringing. Using a DC-DC buck converter composed of an IGBT half-bridge module as an example, the study analyzes the changes in the EMI spectrum caused by bond wire lift-off in both the time and frequency domains. The paper explains the generation mechanism of high-frequency oscillations induced by the interaction between the stray inductance of the DC link and the freewheeling diode. The study reveals that bond wire lift-off alters DM EMI noise emissions by affecting the switching characteristics of the IGBT. Additionally, an increase in the number of lift-off bond wires during ringing significantly enhances DM EMI noise emissions at and above the resonance frequency. The findings of this study provide a new perspective on the aging effects of power electronic devices and their impact on EMI.

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.