一种用于寿命表征和模型校准的电网电迁移测试芯片

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-04-14 DOI:10.1109/TDMR.2025.3560489

Yong Hyeon Yi;Robert Bloom;Armen Kteyan;Alexander Volkov;Jun-Ho Choy;Stephane Moreau;Valeriy Sukharev;Chris H. Kim

{"title":"一种用于寿命表征和模型校准的电网电迁移测试芯片","authors":"Yong Hyeon Yi;Robert Bloom;Armen Kteyan;Alexander Volkov;Jun-Ho Choy;Stephane Moreau;Valeriy Sukharev;Chris H. Kim","doi":"10.1109/TDMR.2025.3560489","DOIUrl":null,"url":null,"abstract":"This work presents silicon data from 28 nm test chips specifically designed to study electromigration (EM) induced lifetime effects. The power grids were generated by an automatic place-and-route tool to create realistic device-under-tests (DUT) to capture power grid EM aging behaviors and lifetimes. Poly-silicon quasi-load cells mimicking the circuit current were employed to withstand high temperature stress. 1,024 local voltages throughout the power grid were tapped out to monitor the voiding locations and IR drop trends with stress. Four power grid architectures with different metal configurations were tested under different temperatures and currents. EM effects under different temperatures and current cycling conditions were also studied.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 2","pages":"253-262"},"PeriodicalIF":2.3000,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Power Grid Electromigration Test Chip for Lifetime Characterization and Model Calibration\",\"authors\":\"Yong Hyeon Yi;Robert Bloom;Armen Kteyan;Alexander Volkov;Jun-Ho Choy;Stephane Moreau;Valeriy Sukharev;Chris H. Kim\",\"doi\":\"10.1109/TDMR.2025.3560489\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents silicon data from 28 nm test chips specifically designed to study electromigration (EM) induced lifetime effects. The power grids were generated by an automatic place-and-route tool to create realistic device-under-tests (DUT) to capture power grid EM aging behaviors and lifetimes. Poly-silicon quasi-load cells mimicking the circuit current were employed to withstand high temperature stress. 1,024 local voltages throughout the power grid were tapped out to monitor the voiding locations and IR drop trends with stress. Four power grid architectures with different metal configurations were tested under different temperatures and currents. EM effects under different temperatures and current cycling conditions were also studied.\",\"PeriodicalId\":448,\"journal\":{\"name\":\"IEEE Transactions on Device and Materials Reliability\",\"volume\":\"25 2\",\"pages\":\"253-262\"},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2025-04-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Device and Materials Reliability\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10964236/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Device and Materials Reliability","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10964236/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

这项工作提出了28纳米测试芯片的硅数据，专门设计用于研究电迁移（EM）诱导的寿命效应。电网由自动放置和布线工具生成，以创建真实的被测设备（DUT），以捕获电网的EM老化行为和寿命。采用模拟电路电流的多晶硅准负载传感器来承受高温应力。在整个电网中抽取1024个局地电压，监测放空位置和随应力的IR下降趋势。对四种不同金属结构的电网结构在不同温度和电流下进行了测试。研究了不同温度和电流循环条件下的电磁效应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A Power Grid Electromigration Test Chip for Lifetime Characterization and Model Calibration

This work presents silicon data from 28 nm test chips specifically designed to study electromigration (EM) induced lifetime effects. The power grids were generated by an automatic place-and-route tool to create realistic device-under-tests (DUT) to capture power grid EM aging behaviors and lifetimes. Poly-silicon quasi-load cells mimicking the circuit current were employed to withstand high temperature stress. 1,024 local voltages throughout the power grid were tapped out to monitor the voiding locations and IR drop trends with stress. Four power grid architectures with different metal configurations were tested under different temperatures and currents. EM effects under different temperatures and current cycling conditions were also studied.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.