{"title":"在二元准二维InI相中,非谐波和粒子类声子传播主导着超低晶格热导率","authors":"Lingyun Ye , Ya-Nan Lyu , Liuming Wei","doi":"10.1016/j.mssp.2025.109731","DOIUrl":null,"url":null,"abstract":"<div><div>Understanding the ultra-low thermal conductivity and phonon transport in quasi-2D van der Waals (vdW) materials like SnSe is essential for advancing the field of thermoelectric functional materials. Our study delves into the anharmonicity and anisotropic phonon dynamics of quasi-2D InI using a comprehensive approach that combines the phonon Boltzmann equation and Wigner transport equation within a first principles framework. InI, sharing an orthorhombic crystal structure with SnSe, showcases a distinctive stacked quasi-2D layered arrangement, resulting in remarkably low averaged thermal conductivity (0.73–0.32 W/mK between 300 and 800 K) due to weak interlayer coupling and pronounced anisotropy in phonon behavior. To unravel the physical underpinnings of this anisotropic low thermal conductivity, we analyze the anisotropic particle-like <em>κ</em><sub>p</sub> and wave-like <em>κ</em><sub>c</sub> contributions. Our investigation reveals that the particle-like <em>κ</em><sub>p</sub> predominantly governs the thermal conductivity behavior. While the thermal conductivity values align reasonably well with experimental data (∼ 0.5 W/mK between 300 and 800 K), the non-linear dependency behavior, distinct from other perovskite or Zintl phase materials, cannot be solely attributed to the increasing significance of interbranch wavelike tunneling. By investigating and comprehending the dual-phonon channels, such as interbranch wavelike tunneling and particle contributions to thermal transport in ultralow thermal conductivity vdW materials like InI, we can gain deeper insights into the underlying phonon dynamics and optimize thermal properties for specific applications. This exploration opens up new avenues for discovering vdW compounds with low <em>κ</em><sub>L</sub> and tailored thermal transport characteristics.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"198 ","pages":"Article 109731"},"PeriodicalIF":4.6000,"publicationDate":"2025-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Anharmonic and particlelike phonon propagation dominates ultralow lattice thermal conductivity in the binary quasi-2D InI phase\",\"authors\":\"Lingyun Ye , Ya-Nan Lyu , Liuming Wei\",\"doi\":\"10.1016/j.mssp.2025.109731\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Understanding the ultra-low thermal conductivity and phonon transport in quasi-2D van der Waals (vdW) materials like SnSe is essential for advancing the field of thermoelectric functional materials. Our study delves into the anharmonicity and anisotropic phonon dynamics of quasi-2D InI using a comprehensive approach that combines the phonon Boltzmann equation and Wigner transport equation within a first principles framework. InI, sharing an orthorhombic crystal structure with SnSe, showcases a distinctive stacked quasi-2D layered arrangement, resulting in remarkably low averaged thermal conductivity (0.73–0.32 W/mK between 300 and 800 K) due to weak interlayer coupling and pronounced anisotropy in phonon behavior. To unravel the physical underpinnings of this anisotropic low thermal conductivity, we analyze the anisotropic particle-like <em>κ</em><sub>p</sub> and wave-like <em>κ</em><sub>c</sub> contributions. Our investigation reveals that the particle-like <em>κ</em><sub>p</sub> predominantly governs the thermal conductivity behavior. While the thermal conductivity values align reasonably well with experimental data (∼ 0.5 W/mK between 300 and 800 K), the non-linear dependency behavior, distinct from other perovskite or Zintl phase materials, cannot be solely attributed to the increasing significance of interbranch wavelike tunneling. By investigating and comprehending the dual-phonon channels, such as interbranch wavelike tunneling and particle contributions to thermal transport in ultralow thermal conductivity vdW materials like InI, we can gain deeper insights into the underlying phonon dynamics and optimize thermal properties for specific applications. This exploration opens up new avenues for discovering vdW compounds with low <em>κ</em><sub>L</sub> and tailored thermal transport characteristics.</div></div>\",\"PeriodicalId\":18240,\"journal\":{\"name\":\"Materials Science in Semiconductor Processing\",\"volume\":\"198 \",\"pages\":\"Article 109731\"},\"PeriodicalIF\":4.6000,\"publicationDate\":\"2025-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science in Semiconductor Processing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1369800125004688\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125004688","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Anharmonic and particlelike phonon propagation dominates ultralow lattice thermal conductivity in the binary quasi-2D InI phase
Understanding the ultra-low thermal conductivity and phonon transport in quasi-2D van der Waals (vdW) materials like SnSe is essential for advancing the field of thermoelectric functional materials. Our study delves into the anharmonicity and anisotropic phonon dynamics of quasi-2D InI using a comprehensive approach that combines the phonon Boltzmann equation and Wigner transport equation within a first principles framework. InI, sharing an orthorhombic crystal structure with SnSe, showcases a distinctive stacked quasi-2D layered arrangement, resulting in remarkably low averaged thermal conductivity (0.73–0.32 W/mK between 300 and 800 K) due to weak interlayer coupling and pronounced anisotropy in phonon behavior. To unravel the physical underpinnings of this anisotropic low thermal conductivity, we analyze the anisotropic particle-like κp and wave-like κc contributions. Our investigation reveals that the particle-like κp predominantly governs the thermal conductivity behavior. While the thermal conductivity values align reasonably well with experimental data (∼ 0.5 W/mK between 300 and 800 K), the non-linear dependency behavior, distinct from other perovskite or Zintl phase materials, cannot be solely attributed to the increasing significance of interbranch wavelike tunneling. By investigating and comprehending the dual-phonon channels, such as interbranch wavelike tunneling and particle contributions to thermal transport in ultralow thermal conductivity vdW materials like InI, we can gain deeper insights into the underlying phonon dynamics and optimize thermal properties for specific applications. This exploration opens up new avenues for discovering vdW compounds with low κL and tailored thermal transport characteristics.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.