固体高能光电发射中的反冲效应-再论

IF 1.8 4区 物理与天体物理 Q2 SPECTROSCOPY
F. Roth , D. Potorochin , A. Gloskovskii , C. Schlueter , L. Wenthaus , S. Molodtsov , W. Drube , W. Eberhardt
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引用次数: 0

摘要

本研究系统地研究了晶体硅(Si)和碳化硅(4H-SiC)在x射线范围为2.45-9.5 keV的光发射中的核能级反冲。通过检查si2p, 2s和c1s核心能级,我们观察到SiC表现出超过单原子反冲预测的能量转移,以及声子诱导的高光子能量下的线形变化。相比之下,纯硅表现出更温和的位移和线宽,与预期的反冲效应一致。这些观察结果表明,特别是复合材料,如SiC,表现出增强的反冲和声子动力学的相互作用,强调了适应这些效应的精细光发射模型的必要性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Recoil effects in high energy photoemission of solids − Revisited
This study systematically investigates core level recoil in photoemission from crystalline silicon (Si) and silicon carbide (4H-SiC), within the X-ray range of 2.45–9.5 keV. By examining the Si 2p, 2s, and C 1s core levels, we observe that SiC exhibits energy shifts exceeding single-atom recoil predictions, along with a lineshape change at higher photon energies attributed to being phonon-induced. In contrast, pure Si shows more modest shifts and line broadening, consistent with expected recoil effects. These observations imply that especially compound materials, such as SiC, exhibit an enhanced interplay of recoil and phonon dynamics, underscoring the necessity for refined photoemission models that accommodate these effects.
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来源期刊
CiteScore
3.30
自引率
5.30%
发文量
64
审稿时长
60 days
期刊介绍: The Journal of Electron Spectroscopy and Related Phenomena publishes experimental, theoretical and applied work in the field of electron spectroscopy and electronic structure, involving techniques which use high energy photons (>10 eV) or electrons as probes or detected particles in the investigation.
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