二维MSi2N4中增强的远程四极效应:对电和热输运的影响

IF 9.4 1区 材料科学 Q1 CHEMISTRY, PHYSICAL
Juan Zhang, Jiayi Gong, Hongyu Chen, Lei Peng, Hezhu Shao, Yan Cen, Jun Zhuang, Heyuan Zhu, Jinjian Zhou, Hao Zhang
{"title":"二维MSi2N4中增强的远程四极效应:对电和热输运的影响","authors":"Juan Zhang, Jiayi Gong, Hongyu Chen, Lei Peng, Hezhu Shao, Yan Cen, Jun Zhuang, Heyuan Zhu, Jinjian Zhou, Hao Zhang","doi":"10.1038/s41524-025-01672-9","DOIUrl":null,"url":null,"abstract":"<p>Long-range higher-order multipolar electron–phonon (<i>e-ph</i>) interactions beyond the dipole-like Fröhlich interactions have long been neglected in the description of various physical properties. Here we demonstrate the contribution from quadrupole effect to the electric and thermal transport properties of monolayer MSi<sub>2</sub>N<sub>4</sub> (M = Mo/W) systems. The quadrupole effect reduces the electron and hole mobilities at 300 K by 25.4%, 12.8% for MoSi<sub>2</sub>N<sub>4</sub>, and by 19.2%, 52.3% for WSi<sub>2</sub>N<sub>4</sub>, respectively. For n- and p-type monolayers with modest dopings by fixing the carrier concentration to 1.0 × 10<sup>14</sup> cm<sup>−2</sup>, the dipole-like <i>e-ph</i> interaction decreases the three-phonon-limited lattice thermal conductivities <i>κ</i><sub><i>l</i></sub> by 17.9% and 43.5% for monolayer MoSi<sub>2</sub>N<sub>4</sub> and WSi<sub>2</sub>N<sub>4</sub>, respectively. However, further considerations of quadrupole <i>e-ph</i> interaction shrink such reductions of three-phonon-limited <i>κ</i><sub><i>l</i></sub> to only 3.6% and 2.4%, respectively due to the cancellation effects. Our results highlight the potential of MSi<sub>2</sub>N<sub>4</sub> monolayers as promising candidates for advanced micro-electronic applications.</p>","PeriodicalId":19342,"journal":{"name":"npj Computational Materials","volume":"36 1","pages":""},"PeriodicalIF":9.4000,"publicationDate":"2025-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhanced long-range quadrupole effects in 2D MSi2N4: impacts on electric and thermal transport\",\"authors\":\"Juan Zhang, Jiayi Gong, Hongyu Chen, Lei Peng, Hezhu Shao, Yan Cen, Jun Zhuang, Heyuan Zhu, Jinjian Zhou, Hao Zhang\",\"doi\":\"10.1038/s41524-025-01672-9\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Long-range higher-order multipolar electron–phonon (<i>e-ph</i>) interactions beyond the dipole-like Fröhlich interactions have long been neglected in the description of various physical properties. Here we demonstrate the contribution from quadrupole effect to the electric and thermal transport properties of monolayer MSi<sub>2</sub>N<sub>4</sub> (M = Mo/W) systems. The quadrupole effect reduces the electron and hole mobilities at 300 K by 25.4%, 12.8% for MoSi<sub>2</sub>N<sub>4</sub>, and by 19.2%, 52.3% for WSi<sub>2</sub>N<sub>4</sub>, respectively. For n- and p-type monolayers with modest dopings by fixing the carrier concentration to 1.0 × 10<sup>14</sup> cm<sup>−2</sup>, the dipole-like <i>e-ph</i> interaction decreases the three-phonon-limited lattice thermal conductivities <i>κ</i><sub><i>l</i></sub> by 17.9% and 43.5% for monolayer MoSi<sub>2</sub>N<sub>4</sub> and WSi<sub>2</sub>N<sub>4</sub>, respectively. However, further considerations of quadrupole <i>e-ph</i> interaction shrink such reductions of three-phonon-limited <i>κ</i><sub><i>l</i></sub> to only 3.6% and 2.4%, respectively due to the cancellation effects. Our results highlight the potential of MSi<sub>2</sub>N<sub>4</sub> monolayers as promising candidates for advanced micro-electronic applications.</p>\",\"PeriodicalId\":19342,\"journal\":{\"name\":\"npj Computational Materials\",\"volume\":\"36 1\",\"pages\":\"\"},\"PeriodicalIF\":9.4000,\"publicationDate\":\"2025-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"npj Computational Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1038/s41524-025-01672-9\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"npj Computational Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1038/s41524-025-01672-9","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0

摘要

远距离高阶多极电子-声子(e-ph)相互作用超越偶极子样Fröhlich相互作用,在各种物理性质的描述中长期被忽视。在这里,我们证明了四极效应对单层MSi2N4 (M = Mo/W)体系的电和热输运性质的贡献。四极效应使MoSi2N4在300 K时的电子和空穴迁移率分别降低了25.4%、12.8%和19.2%、52.3%。当载流子浓度为1.0 × 1014 cm−2时,偶极子e-ph相互作用使MoSi2N4和WSi2N4单层的三声子限制晶格热导率分别降低了17.9%和43.5%。然而,进一步考虑四极e-ph相互作用,由于抵消效应,三声子限制的κl分别减少到3.6%和2.4%。我们的研究结果突出了MSi2N4单层作为先进微电子应用的有前途的候选者的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Enhanced long-range quadrupole effects in 2D MSi2N4: impacts on electric and thermal transport

Enhanced long-range quadrupole effects in 2D MSi2N4: impacts on electric and thermal transport

Long-range higher-order multipolar electron–phonon (e-ph) interactions beyond the dipole-like Fröhlich interactions have long been neglected in the description of various physical properties. Here we demonstrate the contribution from quadrupole effect to the electric and thermal transport properties of monolayer MSi2N4 (M = Mo/W) systems. The quadrupole effect reduces the electron and hole mobilities at 300 K by 25.4%, 12.8% for MoSi2N4, and by 19.2%, 52.3% for WSi2N4, respectively. For n- and p-type monolayers with modest dopings by fixing the carrier concentration to 1.0 × 1014 cm−2, the dipole-like e-ph interaction decreases the three-phonon-limited lattice thermal conductivities κl by 17.9% and 43.5% for monolayer MoSi2N4 and WSi2N4, respectively. However, further considerations of quadrupole e-ph interaction shrink such reductions of three-phonon-limited κl to only 3.6% and 2.4%, respectively due to the cancellation effects. Our results highlight the potential of MSi2N4 monolayers as promising candidates for advanced micro-electronic applications.

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来源期刊
npj Computational Materials
npj Computational Materials Mathematics-Modeling and Simulation
CiteScore
15.30
自引率
5.20%
发文量
229
审稿时长
6 weeks
期刊介绍: npj Computational Materials is a high-quality open access journal from Nature Research that publishes research papers applying computational approaches for the design of new materials and enhancing our understanding of existing ones. The journal also welcomes papers on new computational techniques and the refinement of current approaches that support these aims, as well as experimental papers that complement computational findings. Some key features of npj Computational Materials include a 2-year impact factor of 12.241 (2021), article downloads of 1,138,590 (2021), and a fast turnaround time of 11 days from submission to the first editorial decision. The journal is indexed in various databases and services, including Chemical Abstracts Service (ACS), Astrophysics Data System (ADS), Current Contents/Physical, Chemical and Earth Sciences, Journal Citation Reports/Science Edition, SCOPUS, EI Compendex, INSPEC, Google Scholar, SCImago, DOAJ, CNKI, and Science Citation Index Expanded (SCIE), among others.
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