具有高可重复多电阻态的非晶氧化镓基非丝状忆阻器件。板牙。8/2025)

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2025-06-03 DOI:10.1002/aelm.202570024

Onur Toprak, Florian Maudet, Markus Wollgarten, Charlotte Van Dijck, Roland Thewes, Veeresh Deshpande, Catherine Dubourdieu

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引用次数: 0

摘要

记忆器件在2400765号文章中，Onur Toprak， Catherine Dubourdieu及其同事提出了一种基于混合电子离子非晶氧化镓导体的记忆器件。电阻开关源于TiOx和GaOx界面层之间的场驱动氧交换以及电荷捕获/脱陷。多种高度可重复的状态可以编程在这个自整流装置在增强和抑制。这个装置显示出模仿生物突触的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Amorphous Gallium-Oxide-Based Non-Filamentary Memristive Device with Highly Repeatable Multiple Resistance States (Adv. Electron. Mater. 8/2025)

查看原文本刊更多论文

Amorphous Gallium-Oxide-Based Non-Filamentary Memristive Device with Highly Repeatable Multiple Resistance States (Adv. Electron. Mater. 8/2025)

Memristive Devices

In article number 2400765, Onur Toprak, Catherine Dubourdieu, and co-workers propose a memristive device based on a mixed electronic ionic amorphous gallium oxide conductor. The resistive switching originates from a field-driven oxygen exchange between the interfacial TiO_x and the GaO_x layers and from charge trapping/detrapping. Multiple highly repeatable states can be programmed in this self-rectifying device both in potentiation and depression. This device shows potential to emulate biological synapses.

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来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.