SiGe hbt大电流雪崩倍增因子建模与提取

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-04-15 DOI:10.1109/TED.2025.3558114

Huaiyuan Zhang;Guofu Niu;Andries J. Scholten;Marnix B. Willemsen

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引用次数: 0

摘要

提出了一种新的紧凑模型和大电流下雪崩倍增因子（${M}-{1}$）的提取方法。在固定的集电极-基极（CB）电压下（${V}_{\text {CB}}$）， ${M}-{1}$首先随着发射极电流（${I}_{E}$）的增大而减小，当柯克效应发生时，${M}-{1}$在较大电流下增加。评估了不同的强制- ${I}_{E}~{M}-{1}$提取技术，包括一种新的基于紧凑建模的${M}-{1}$提取技术，该技术准确地捕获了早期效应、柯克效应和自加热。该模型在MEXTRAM的开发版本中实现，并通过实验证明可以模拟${M}-{1}$和基极电流（${I}_{B}$）的电流和偏置依赖关系。

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Avalanche Multiplication Factor Modeling and Extraction at High Currents in SiGe HBTs

A new compact model and an extraction method for avalanche multiplication factor (

${M}-{1}$

) at high currents are proposed. At a fixed collector-base (CB) voltage (

${V}_{\text {CB}}$

${M}-{1}$

first decreases with increasing emitter current (

${I}_{E}$

) and then increases at higher currents when the Kirk effect occurs. Different forced-

${I}_{E}~{M}-{1}$

extraction techniques are evaluated, including a new compact modeling-based

${M}-{1}$

extraction technique that accurately captures the Early effect, the Kirk effect, and self-heating. The model is implemented in a development version of MEXTRAM and demonstrated experimentally to model both the current and bias dependence of

${M}-{1}$

and base current (

${I}_{B}$

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.