{"title":"基于s参数测量的频变非周期SAW器件宽带特性研究","authors":"Hansoo Yoo;Yungseon Eo","doi":"10.1109/TED.2025.3562837","DOIUrl":null,"url":null,"abstract":"The physical characteristics of surface acoustic wave interdigital transducers (SAW IDTs) with aperiodic and irregular grating structures are investigated. S-parameters for various test SAW IDT devices fabricated on 42°YX-LiTaO3 (piezoelectric substrate) are measured using a wafer-level de-embedding technique over a broad frequency band. Acoustic wave propagation model parameters for the physical behavior of aperiodic or asymmetric SAW IDT devices are determined in terms of frequency-variant and grating-layout-dependent parameters but are not constant. It is shown that numerical calculations based on the proposed technique have excellent agreement with experimental data.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 6","pages":"3140-3147"},"PeriodicalIF":2.9000,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"S-Parameter-Measurement-Based Broadband Characterization for Frequency-Variant Aperiodic SAW Devices\",\"authors\":\"Hansoo Yoo;Yungseon Eo\",\"doi\":\"10.1109/TED.2025.3562837\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The physical characteristics of surface acoustic wave interdigital transducers (SAW IDTs) with aperiodic and irregular grating structures are investigated. S-parameters for various test SAW IDT devices fabricated on 42°YX-LiTaO3 (piezoelectric substrate) are measured using a wafer-level de-embedding technique over a broad frequency band. Acoustic wave propagation model parameters for the physical behavior of aperiodic or asymmetric SAW IDT devices are determined in terms of frequency-variant and grating-layout-dependent parameters but are not constant. It is shown that numerical calculations based on the proposed technique have excellent agreement with experimental data.\",\"PeriodicalId\":13092,\"journal\":{\"name\":\"IEEE Transactions on Electron Devices\",\"volume\":\"72 6\",\"pages\":\"3140-3147\"},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2025-04-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Electron Devices\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10979706/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10979706/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
S-Parameter-Measurement-Based Broadband Characterization for Frequency-Variant Aperiodic SAW Devices
The physical characteristics of surface acoustic wave interdigital transducers (SAW IDTs) with aperiodic and irregular grating structures are investigated. S-parameters for various test SAW IDT devices fabricated on 42°YX-LiTaO3 (piezoelectric substrate) are measured using a wafer-level de-embedding technique over a broad frequency band. Acoustic wave propagation model parameters for the physical behavior of aperiodic or asymmetric SAW IDT devices are determined in terms of frequency-variant and grating-layout-dependent parameters but are not constant. It is shown that numerical calculations based on the proposed technique have excellent agreement with experimental data.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.