Mohammad Ghanem , Philippe Dollfus , Jerome Saint-Martin
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Monte Carlo simulation of thermoelectric properties in silicon nanofilms: diffusive seebeck coefficient analysis
A silicon based nanofilm is examined by using self-consistent electron-phonon transport model. An ensemble Monte Carlo solver for electrons is coupled with a phonon bath that can have a non-uniform temperature. In this simulator, the electron-phonon scattering rates depend on the local temperature and the boundary conditions are also temperature dependent. Using this simulation tool, the thermoelectric properties can be studied, at the microscopic level, in doped semiconductor nanostructures of different sizes and with different types of interfaces. In the present work, the only electronic so-called diffusive Seebeck coefficient of silicon-based nanofilms is investigated as the phonon drag effect is not considered. The influence of the average temperature, temperature gradient, device size, and carrier concentration are investigated.
期刊介绍:
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.