硅纳米膜热电特性的蒙特卡罗模拟:扩散塞贝克系数分析

IF 1.4 4区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Mohammad Ghanem , Philippe Dollfus , Jerome Saint-Martin
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引用次数: 0

摘要

利用自洽电子-声子输运模型对硅基纳米膜进行了研究。电子的集合蒙特卡罗解算器与具有非均匀温度的声子浴相耦合。在该模拟器中,电子-声子散射速率依赖于局部温度,边界条件也依赖于温度。利用该模拟工具,可以在微观水平上研究不同尺寸和不同类型界面的掺杂半导体纳米结构的热电性质。在本工作中,研究了在不考虑声子阻力效应的情况下,硅基纳米膜的唯一电子所谓扩散塞贝克系数。研究了平均温度、温度梯度、器件尺寸和载流子浓度等因素的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Monte Carlo simulation of thermoelectric properties in silicon nanofilms: diffusive seebeck coefficient analysis
A silicon based nanofilm is examined by using self-consistent electron-phonon transport model. An ensemble Monte Carlo solver for electrons is coupled with a phonon bath that can have a non-uniform temperature. In this simulator, the electron-phonon scattering rates depend on the local temperature and the boundary conditions are also temperature dependent. Using this simulation tool, the thermoelectric properties can be studied, at the microscopic level, in doped semiconductor nanostructures of different sizes and with different types of interfaces. In the present work, the only electronic so-called diffusive Seebeck coefficient of silicon-based nanofilms is investigated as the phonon drag effect is not considered. The influence of the average temperature, temperature gradient, device size, and carrier concentration are investigated.
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来源期刊
Solid-state Electronics
Solid-state Electronics 物理-工程:电子与电气
CiteScore
3.00
自引率
5.90%
发文量
212
审稿时长
3 months
期刊介绍: It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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