Liang Wang, Le Zhang, Shuaibin Hua, Puli Gan, Qiuyun Fu and Xin Guo
{"title":"基于ZnO阈值开关神经元的综合速率和首峰时间编码人工视觉感知系统","authors":"Liang Wang, Le Zhang, Shuaibin Hua, Puli Gan, Qiuyun Fu and Xin Guo","doi":"10.1039/D5TC00149H","DOIUrl":null,"url":null,"abstract":"<p >The proliferation of wearable electronics and Internet of Things (IoT) has driven the development of energy-efficient sensory processing systems inspired by the spiking mechanisms of the human sensory system. In this study, we present an artificial neuron integrated with an Ag/ZnO/Pt volatile threshold switching (TS) memristor for artificial visual perception and neuromorphic computing. The memristor exhibits electroforming-free operation, stable volatile switching behavior (with a cumulative probability variation of 1.508%), high ON/OFF ratios (∼1.64 × 10<small><sup>4</sup></small>), and excellent device uniformity, enabling it to effectively emulate biological neuronal functions such as spike encoding and leaky integrate-and-fire (LIF) dynamics. By integrating the memristor with photoresistors, an artificial visual neuron was developed, capable of spatial integration and letter recognition through distinct oscillation frequencies. Furthermore, an artificial visual perception system incorporating a spiking neural network (SNN) based on ZnO neurons was implemented for Yale facial image classification and MNIST digit recognition, employing the rate coding, the time-to-first-spike (TTFS) coding, and the rate-temporal fusion (RTF) coding strategies. Notably, the artificial visual perception system employing the RTF coding achieved the highest accuracy (94.4% for the Yale facial images and 91.3% for MNIST images) with superior energy efficiency. These results highlight the potential of ZnO-based artificial neurons for energy-efficient neuromorphic computing and intelligent sensory systems.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 21","pages":" 10848-10856"},"PeriodicalIF":5.7000,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An artificial visual perception system based on ZnO threshold switching neurons with integrated rate and time-to-first-spike coding†\",\"authors\":\"Liang Wang, Le Zhang, Shuaibin Hua, Puli Gan, Qiuyun Fu and Xin Guo\",\"doi\":\"10.1039/D5TC00149H\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >The proliferation of wearable electronics and Internet of Things (IoT) has driven the development of energy-efficient sensory processing systems inspired by the spiking mechanisms of the human sensory system. In this study, we present an artificial neuron integrated with an Ag/ZnO/Pt volatile threshold switching (TS) memristor for artificial visual perception and neuromorphic computing. The memristor exhibits electroforming-free operation, stable volatile switching behavior (with a cumulative probability variation of 1.508%), high ON/OFF ratios (∼1.64 × 10<small><sup>4</sup></small>), and excellent device uniformity, enabling it to effectively emulate biological neuronal functions such as spike encoding and leaky integrate-and-fire (LIF) dynamics. By integrating the memristor with photoresistors, an artificial visual neuron was developed, capable of spatial integration and letter recognition through distinct oscillation frequencies. Furthermore, an artificial visual perception system incorporating a spiking neural network (SNN) based on ZnO neurons was implemented for Yale facial image classification and MNIST digit recognition, employing the rate coding, the time-to-first-spike (TTFS) coding, and the rate-temporal fusion (RTF) coding strategies. Notably, the artificial visual perception system employing the RTF coding achieved the highest accuracy (94.4% for the Yale facial images and 91.3% for MNIST images) with superior energy efficiency. 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An artificial visual perception system based on ZnO threshold switching neurons with integrated rate and time-to-first-spike coding†
The proliferation of wearable electronics and Internet of Things (IoT) has driven the development of energy-efficient sensory processing systems inspired by the spiking mechanisms of the human sensory system. In this study, we present an artificial neuron integrated with an Ag/ZnO/Pt volatile threshold switching (TS) memristor for artificial visual perception and neuromorphic computing. The memristor exhibits electroforming-free operation, stable volatile switching behavior (with a cumulative probability variation of 1.508%), high ON/OFF ratios (∼1.64 × 104), and excellent device uniformity, enabling it to effectively emulate biological neuronal functions such as spike encoding and leaky integrate-and-fire (LIF) dynamics. By integrating the memristor with photoresistors, an artificial visual neuron was developed, capable of spatial integration and letter recognition through distinct oscillation frequencies. Furthermore, an artificial visual perception system incorporating a spiking neural network (SNN) based on ZnO neurons was implemented for Yale facial image classification and MNIST digit recognition, employing the rate coding, the time-to-first-spike (TTFS) coding, and the rate-temporal fusion (RTF) coding strategies. Notably, the artificial visual perception system employing the RTF coding achieved the highest accuracy (94.4% for the Yale facial images and 91.3% for MNIST images) with superior energy efficiency. These results highlight the potential of ZnO-based artificial neurons for energy-efficient neuromorphic computing and intelligent sensory systems.
期刊介绍:
The Journal of Materials Chemistry is divided into three distinct sections, A, B, and C, each catering to specific applications of the materials under study:
Journal of Materials Chemistry A focuses primarily on materials intended for applications in energy and sustainability.
Journal of Materials Chemistry B specializes in materials designed for applications in biology and medicine.
Journal of Materials Chemistry C is dedicated to materials suitable for applications in optical, magnetic, and electronic devices.
Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive.
Bioelectronics
Conductors
Detectors
Dielectrics
Displays
Ferroelectrics
Lasers
LEDs
Lighting
Liquid crystals
Memory
Metamaterials
Multiferroics
Photonics
Photovoltaics
Semiconductors
Sensors
Single molecule conductors
Spintronics
Superconductors
Thermoelectrics
Topological insulators
Transistors