基于a-IGZO TFT的高密度压光响应传感器阵列

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Jianhua Zhang;Jixing Zhou;Longwei Xue;Junshuai Dai;Xudong Zhang;Hai Liu;Longlong Chen;Tingting Zhao
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引用次数: 0

摘要

类似于眼球和皮肤的检测能力,如压力和光感应,对于电子皮肤、仿生眼球、人机交互和仿生机器人至关重要。以前的研究主要集中在调查单个物理量,而同时绘制这些物理量仍然具有挑战性。介绍了一种基于非晶铟镓锌氧化物(a- igzo)薄膜晶体管(TFTs)的双参数传感器阵列。该阵列能够同时独立检测压力(106.9 kPa ${}^{-{1}}$,范围从0.5到10 kPa)和紫外线(UV)光(0.5 ($\mu $ W/cm2) ${}^{-{1}}$,范围从0到$76~\mu $ W/cm2)。压力检测是通过连接到tft源电极的图图化导电膜来实现的,而紫外光是通过a- igzo通道中光产生的电子-空穴对来检测的。tft的集成将压力和光传感器阵列的空间分辨率提高到每平方厘米128像素(PPSC)。该双参数高密度传感器阵列的研制对于纹理和形状识别等仿生眼球和电子皮肤的应用具有重要意义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High-Density Sensor Array Based on a-IGZO TFT for Pressure and Light Response
Detection capabilities similar to those of eyeballs and skin, such as pressure and light sensing, are crucial for electronic skins, bionic eyeballs, human-machine interactions, and biomimetic robots. Previous studies have primarily focused on investigating individual physical quantities, while simultaneously mapping these quantities remains challenging. This article introduces a dual-parameter sensor array based on amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). The array is capable of simultaneously and independently detecting pressure (106.9 kPa ${}^{-{1}}$ , ranging from 0.5 to 10 kPa) and ultraviolet (UV) light (0.5 ( $\mu $ W/cm2) ${}^{-{1}}$ , ranging from 0 to $76~\mu $ W/cm2). The pressure detection is achieved through a patterned conductive film connected to the source electrode of the TFTs, while the UV light is detected by photogenerated electron-hole pairs in the a-IGZO channel. Integration of TFTs increase the spatial resolution of both the pressure and light sensor array to 128 pixels per square centimeter (PPSC). The development of this dual-parameter high-density sensor array holds profound significance for applications in biomimetic eyeballs and electronic skin, such as texture and shape recognition.
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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