Tanvir H. Pantha;Abhishek Khanna;Huacheng Ye;Shaila Niazi;Miriyala P. Kamal;Biswadeep Chakraborty;Shumiya Alam;Ethan Weinstock;Nithin Babu;Saibal Mukhopadhyay;Yun Chiu;Suman Datta;Kerem Y. Camsari;Sourav Dutta
{"title":"用BEOL效应管解决3-D CMOS + X成像机的连接瓶颈","authors":"Tanvir H. Pantha;Abhishek Khanna;Huacheng Ye;Shaila Niazi;Miriyala P. Kamal;Biswadeep Chakraborty;Shumiya Alam;Ethan Weinstock;Nithin Babu;Saibal Mukhopadhyay;Yun Chiu;Suman Datta;Kerem Y. Camsari;Sourav Dutta","doi":"10.1109/TED.2025.3562510","DOIUrl":null,"url":null,"abstract":"Recent advancements in Ising machines present an exciting new paradigm for addressing computationally intensive problems with superior energy efficiency and speed compared to conventional digital computers. Despite these promising developments, many real-world problems demand high connectivity, a requirement that exceeds the capabilities of current CMOS-based Ising machine hardware. To overcome this connectivity bottleneck, we propose a novel approach leveraging programmable multibit back-end-of-line (BEOL) ferroelectric field-effect transistor (FeFETs) capable of monolithic 3-D stacking. We experimentally demonstrate a 10-node, 24-coupling Ising machine utilizing dual-gated BEOL FeFETs. This platform enables real-time reconfigurability and supports diverse computational workloads, including combinatorial optimization problems and energy-based learning. Our platform demonstrates robust error-resilient computation with minimal accuracy degradation, even under high endurance conditions of up to 10 billion read and write cycles. This resilience is critical for both read-intensive forward problems and write-intensive inverse or learning problems. To evaluate the performance and area gains, we benchmark the proposed FeFET-based architecture against traditional CMOS implementations. The results reveal significant advantages for FeFET technology, including an <inline-formula> <tex-math>$8.2\\times $ </tex-math></inline-formula> increase in coupling density, an <inline-formula> <tex-math>$11\\times $ </tex-math></inline-formula> improvement in energy efficiency, and a <inline-formula> <tex-math>$2.1\\times $ </tex-math></inline-formula> reduction in latency.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 6","pages":"3335-3342"},"PeriodicalIF":2.9000,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Addressing the Connectivity Bottleneck With BEOL FeFETs for 3-D CMOS + X Ising Machines\",\"authors\":\"Tanvir H. Pantha;Abhishek Khanna;Huacheng Ye;Shaila Niazi;Miriyala P. Kamal;Biswadeep Chakraborty;Shumiya Alam;Ethan Weinstock;Nithin Babu;Saibal Mukhopadhyay;Yun Chiu;Suman Datta;Kerem Y. Camsari;Sourav Dutta\",\"doi\":\"10.1109/TED.2025.3562510\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recent advancements in Ising machines present an exciting new paradigm for addressing computationally intensive problems with superior energy efficiency and speed compared to conventional digital computers. Despite these promising developments, many real-world problems demand high connectivity, a requirement that exceeds the capabilities of current CMOS-based Ising machine hardware. To overcome this connectivity bottleneck, we propose a novel approach leveraging programmable multibit back-end-of-line (BEOL) ferroelectric field-effect transistor (FeFETs) capable of monolithic 3-D stacking. We experimentally demonstrate a 10-node, 24-coupling Ising machine utilizing dual-gated BEOL FeFETs. This platform enables real-time reconfigurability and supports diverse computational workloads, including combinatorial optimization problems and energy-based learning. Our platform demonstrates robust error-resilient computation with minimal accuracy degradation, even under high endurance conditions of up to 10 billion read and write cycles. This resilience is critical for both read-intensive forward problems and write-intensive inverse or learning problems. To evaluate the performance and area gains, we benchmark the proposed FeFET-based architecture against traditional CMOS implementations. The results reveal significant advantages for FeFET technology, including an <inline-formula> <tex-math>$8.2\\\\times $ </tex-math></inline-formula> increase in coupling density, an <inline-formula> <tex-math>$11\\\\times $ </tex-math></inline-formula> improvement in energy efficiency, and a <inline-formula> <tex-math>$2.1\\\\times $ </tex-math></inline-formula> reduction in latency.\",\"PeriodicalId\":13092,\"journal\":{\"name\":\"IEEE Transactions on Electron Devices\",\"volume\":\"72 6\",\"pages\":\"3335-3342\"},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2025-04-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Electron Devices\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10979293/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10979293/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Addressing the Connectivity Bottleneck With BEOL FeFETs for 3-D CMOS + X Ising Machines
Recent advancements in Ising machines present an exciting new paradigm for addressing computationally intensive problems with superior energy efficiency and speed compared to conventional digital computers. Despite these promising developments, many real-world problems demand high connectivity, a requirement that exceeds the capabilities of current CMOS-based Ising machine hardware. To overcome this connectivity bottleneck, we propose a novel approach leveraging programmable multibit back-end-of-line (BEOL) ferroelectric field-effect transistor (FeFETs) capable of monolithic 3-D stacking. We experimentally demonstrate a 10-node, 24-coupling Ising machine utilizing dual-gated BEOL FeFETs. This platform enables real-time reconfigurability and supports diverse computational workloads, including combinatorial optimization problems and energy-based learning. Our platform demonstrates robust error-resilient computation with minimal accuracy degradation, even under high endurance conditions of up to 10 billion read and write cycles. This resilience is critical for both read-intensive forward problems and write-intensive inverse or learning problems. To evaluate the performance and area gains, we benchmark the proposed FeFET-based architecture against traditional CMOS implementations. The results reveal significant advantages for FeFET technology, including an $8.2\times $ increase in coupling density, an $11\times $ improvement in energy efficiency, and a $2.1\times $ reduction in latency.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.