基于基片集成同轴线的高性能微型化集成带阻滤波器

IF 4.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Danyu Yang;Yuandan Dong
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引用次数: 0

摘要

本研究介绍了一种高性能紧凑型带阻滤波器(BSF),该滤波器采用多层印刷电路板上的衬底集成同轴线(SICL)和阶跃阻抗谐振器(SIRs)设计而成。微型化是通过悬浮在腔体中心的弯曲SICL和垂直堆叠在其上下的弯曲SIRs来实现的。带内响应可以通过调整SIRs低阻抗部分之间的垂直耦合来精细地控制。提供了一个等效的集总电路模型与导纳逆变器来解释基本原理。BSF非常紧凑,尺寸仅为$0.14~\lambda _{{g}}\乘以0.10\lambda _{{g}}\乘以0.03\lambda _{{g}}$,并且具有易于集成到电路中的表面贴装设计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Miniaturized Integrated Bandstop Filter With High In-Band Performance Based on Substrate Integrated Coaxial Line
This study introduces a high-performance and compact bandstop filter (BSF) designed using substrate integrated coaxial line (SICL) and stepped-impedance resonators (SIRs) in a multilayer printed circuit board. Miniaturization is realized by a sinuous SICL suspended in the center of the cavity and two meandered SIRs vertically stacked above and below it. The in-band response can be finely controlled by adjusting the vertical coupling between the low-impedance sections of the SIRs. An equivalent lumped circuit model with admittance inverters is provided to explain the underlying principles. The BSF is highly compact, measuring just $0.14~\lambda _{{g}}\times 0.10\lambda _{{g}} \times 0.03\lambda _{{g}}$ , and features a surface-mountable design for easy integration into circuits.
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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