p掺杂†扩展有机光电突触晶体管的光响应范围

IF 5.7 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Jie Huang, Shunhong Dong and Qingdong Zheng
{"title":"p掺杂†扩展有机光电突触晶体管的光响应范围","authors":"Jie Huang, Shunhong Dong and Qingdong Zheng","doi":"10.1039/D5TC00345H","DOIUrl":null,"url":null,"abstract":"<p >Organic optoelectronic synaptic transistors show great promise as a platform for future artificial visual synapses and integrated computing-storage systems due to their biocompatibility and excellent flexibility. However, the light response range of current organic optoelectronic synaptic transistors is limited to the visible and near infrared (IR) spectrum because of the intrinsic light absorption properties of organic materials. Given the significant potential applications of the infrared (or short-wavelength infrared, SWIR) spectrum in artificial synapse development, there is an urgent need for simple and effective methods to extend the optoelectronic synaptic response into the short-wavelength IR range. Here, we present an organic field-effect transistor (OFET) that operates as an optoelectronic synaptic device, achieving a significantly broadened spectral response by utilizing a charge transfer complex composed of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane and poly(3-hexylthiophene-2,5-diyl). At the wavelength of 1550 nm, the device exhibits an impressive 7920% enhancement in light response. Our artificial synaptic device not only replicates typical synaptic activity and mimics the human brain's learning processes but also demonstrates capabilities in optical information sensing, processing, and array imaging. Notably, owing to the pyro-phototronic effect of the active layer excited at 1550 nm, the artificial synapse achieves ultra-low power (40 fJ) operation under extremely low bias (−85.2 μV), addressing the challenge of achieving reliable, light-modulated neuromorphic applications with low power consumption. This study presents a straightforward yet effective approach for advancing neuromorphic computing in the SWIR region.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 20","pages":" 10251-10261"},"PeriodicalIF":5.7000,"publicationDate":"2025-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Extending the light response range of organic photoelectric synaptic transistors by p-doping†\",\"authors\":\"Jie Huang, Shunhong Dong and Qingdong Zheng\",\"doi\":\"10.1039/D5TC00345H\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >Organic optoelectronic synaptic transistors show great promise as a platform for future artificial visual synapses and integrated computing-storage systems due to their biocompatibility and excellent flexibility. However, the light response range of current organic optoelectronic synaptic transistors is limited to the visible and near infrared (IR) spectrum because of the intrinsic light absorption properties of organic materials. Given the significant potential applications of the infrared (or short-wavelength infrared, SWIR) spectrum in artificial synapse development, there is an urgent need for simple and effective methods to extend the optoelectronic synaptic response into the short-wavelength IR range. Here, we present an organic field-effect transistor (OFET) that operates as an optoelectronic synaptic device, achieving a significantly broadened spectral response by utilizing a charge transfer complex composed of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane and poly(3-hexylthiophene-2,5-diyl). At the wavelength of 1550 nm, the device exhibits an impressive 7920% enhancement in light response. Our artificial synaptic device not only replicates typical synaptic activity and mimics the human brain's learning processes but also demonstrates capabilities in optical information sensing, processing, and array imaging. Notably, owing to the pyro-phototronic effect of the active layer excited at 1550 nm, the artificial synapse achieves ultra-low power (40 fJ) operation under extremely low bias (−85.2 μV), addressing the challenge of achieving reliable, light-modulated neuromorphic applications with low power consumption. This study presents a straightforward yet effective approach for advancing neuromorphic computing in the SWIR region.</p>\",\"PeriodicalId\":84,\"journal\":{\"name\":\"Journal of Materials Chemistry C\",\"volume\":\" 20\",\"pages\":\" 10251-10261\"},\"PeriodicalIF\":5.7000,\"publicationDate\":\"2025-04-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Chemistry C\",\"FirstCategoryId\":\"1\",\"ListUrlMain\":\"https://pubs.rsc.org/en/content/articlelanding/2025/tc/d5tc00345h\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Chemistry C","FirstCategoryId":"1","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2025/tc/d5tc00345h","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

有机光电突触晶体管具有良好的生物相容性和灵活性,在未来的人工视觉突触和集成计算存储系统中具有广阔的应用前景。然而,由于有机材料固有的光吸收特性,目前有机光电突触晶体管的光响应范围仅限于可见光和近红外光谱。鉴于红外(或短波红外,SWIR)光谱在人工突触发育中的重要潜在应用,迫切需要一种简单有效的方法将光电突触反应扩展到短波红外范围。在这里,我们提出了一种作为光电突触器件的有机场效应晶体管(OFET),利用由2,3,5,6-四氟-7,7,8,8-四氰喹诺二甲烷和聚(3-己基噻吩-2,5-二基)组成的电荷转移配合物实现了显着扩大的光谱响应。在波长1550 nm处,该器件的光响应增强了7920%。我们的人工突触装置不仅复制了典型的突触活动,模仿了人类大脑的学习过程,而且还展示了光学信息感知、处理和阵列成像的能力。值得注意的是,由于在1550 nm处激发的有源层的热光电子效应,人工突触在极低偏压(- 85.2 μV)下实现了超低功耗(40 fJ)的工作,解决了以低功耗实现可靠的光调制神经形态应用的挑战。本研究为推进SWIR区域的神经形态计算提供了一种简单而有效的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Extending the light response range of organic photoelectric synaptic transistors by p-doping†

Organic optoelectronic synaptic transistors show great promise as a platform for future artificial visual synapses and integrated computing-storage systems due to their biocompatibility and excellent flexibility. However, the light response range of current organic optoelectronic synaptic transistors is limited to the visible and near infrared (IR) spectrum because of the intrinsic light absorption properties of organic materials. Given the significant potential applications of the infrared (or short-wavelength infrared, SWIR) spectrum in artificial synapse development, there is an urgent need for simple and effective methods to extend the optoelectronic synaptic response into the short-wavelength IR range. Here, we present an organic field-effect transistor (OFET) that operates as an optoelectronic synaptic device, achieving a significantly broadened spectral response by utilizing a charge transfer complex composed of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane and poly(3-hexylthiophene-2,5-diyl). At the wavelength of 1550 nm, the device exhibits an impressive 7920% enhancement in light response. Our artificial synaptic device not only replicates typical synaptic activity and mimics the human brain's learning processes but also demonstrates capabilities in optical information sensing, processing, and array imaging. Notably, owing to the pyro-phototronic effect of the active layer excited at 1550 nm, the artificial synapse achieves ultra-low power (40 fJ) operation under extremely low bias (−85.2 μV), addressing the challenge of achieving reliable, light-modulated neuromorphic applications with low power consumption. This study presents a straightforward yet effective approach for advancing neuromorphic computing in the SWIR region.

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来源期刊
Journal of Materials Chemistry C
Journal of Materials Chemistry C MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
10.80
自引率
6.20%
发文量
1468
期刊介绍: The Journal of Materials Chemistry is divided into three distinct sections, A, B, and C, each catering to specific applications of the materials under study: Journal of Materials Chemistry A focuses primarily on materials intended for applications in energy and sustainability. Journal of Materials Chemistry B specializes in materials designed for applications in biology and medicine. Journal of Materials Chemistry C is dedicated to materials suitable for applications in optical, magnetic, and electronic devices. Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive. Bioelectronics Conductors Detectors Dielectrics Displays Ferroelectrics Lasers LEDs Lighting Liquid crystals Memory Metamaterials Multiferroics Photonics Photovoltaics Semiconductors Sensors Single molecule conductors Spintronics Superconductors Thermoelectrics Topological insulators Transistors
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