共轭结构中电荷积累对量子干涉的操纵

IF 5.1 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Jiao-Yang Liu, Hui-Xin Li, Yun-Long Ge, Kai Qu, Fei Chen, Zhong-Ning Chen, Zong-Liang Li and Qian-Chong Zhang
{"title":"共轭结构中电荷积累对量子干涉的操纵","authors":"Jiao-Yang Liu, Hui-Xin Li, Yun-Long Ge, Kai Qu, Fei Chen, Zhong-Ning Chen, Zong-Liang Li and Qian-Chong Zhang","doi":"10.1039/D5TC00442J","DOIUrl":null,"url":null,"abstract":"<p >Modulating charge accumulation in molecular structures to switch the quantum interference effect (QIE) presents a promising approach for manipulating conductance in molecular devices without altering the molecular structure, which is crucial for real molecular device applications. However, understanding the QIE switch by charging is still a challenge. In this study, we used carbon ring structures to induce and finely modulate the charge accumulation in cross-conjugated diphenylpenta-1,4-dien-3-one molecular junctions. Our measurements show that an approximate one-order magnitude conductance suppression was detected in the highly charged structure compared to the moderately charged structures by using the scanning tunneling microscopy break junction (STM-BJ) technique. The theoretical calculations revealed that the energy of anti-resonance in destructive QI was governed by the ratio of orbital coefficients between HOMO−1 and HOMO. Specifically, a higher ratio shifted the anti-resonance toward the HOMO, whereas a lower ratio maintained the anti-resonance around the Fermi energy. The charge accumulation within the conjugated structure decreased the coefficient ratio, thereby switching the QIE from constructive to destructive when the number of ring members reached seven. This study not only provides a chance to understand the mechanism of QIE switching by charge but also paves the way for utilizing the charge accumulation to manipulate the conductance switch in molecular devices.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 20","pages":" 10223-10230"},"PeriodicalIF":5.1000,"publicationDate":"2025-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Manipulation of quantum interference by charge accumulation in conjugated structures†\",\"authors\":\"Jiao-Yang Liu, Hui-Xin Li, Yun-Long Ge, Kai Qu, Fei Chen, Zhong-Ning Chen, Zong-Liang Li and Qian-Chong Zhang\",\"doi\":\"10.1039/D5TC00442J\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >Modulating charge accumulation in molecular structures to switch the quantum interference effect (QIE) presents a promising approach for manipulating conductance in molecular devices without altering the molecular structure, which is crucial for real molecular device applications. However, understanding the QIE switch by charging is still a challenge. In this study, we used carbon ring structures to induce and finely modulate the charge accumulation in cross-conjugated diphenylpenta-1,4-dien-3-one molecular junctions. Our measurements show that an approximate one-order magnitude conductance suppression was detected in the highly charged structure compared to the moderately charged structures by using the scanning tunneling microscopy break junction (STM-BJ) technique. The theoretical calculations revealed that the energy of anti-resonance in destructive QI was governed by the ratio of orbital coefficients between HOMO−1 and HOMO. Specifically, a higher ratio shifted the anti-resonance toward the HOMO, whereas a lower ratio maintained the anti-resonance around the Fermi energy. The charge accumulation within the conjugated structure decreased the coefficient ratio, thereby switching the QIE from constructive to destructive when the number of ring members reached seven. This study not only provides a chance to understand the mechanism of QIE switching by charge but also paves the way for utilizing the charge accumulation to manipulate the conductance switch in molecular devices.</p>\",\"PeriodicalId\":84,\"journal\":{\"name\":\"Journal of Materials Chemistry C\",\"volume\":\" 20\",\"pages\":\" 10223-10230\"},\"PeriodicalIF\":5.1000,\"publicationDate\":\"2025-04-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Chemistry C\",\"FirstCategoryId\":\"1\",\"ListUrlMain\":\"https://pubs.rsc.org/en/content/articlelanding/2025/tc/d5tc00442j\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Chemistry C","FirstCategoryId":"1","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2025/tc/d5tc00442j","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

调制分子结构中的电荷积累以切换量子干涉效应(QIE)是一种很有前途的方法,可以在不改变分子结构的情况下操纵分子器件的电导,这对于真正的分子器件应用至关重要。然而,通过充电来理解QIE开关仍然是一个挑战。在这项研究中,我们利用碳环结构诱导和精细调节交叉共轭二苯基五-1,4-二烯-3- 1分子结中的电荷积累。我们的测量表明,使用扫描隧道显微镜破断结(STM-BJ)技术,与中等电荷结构相比,在高电荷结构中检测到近似一个数量级的电导抑制。理论计算表明,破坏性QI的反共振能量由HOMO - 1和HOMO之间的轨道系数之比决定。具体来说,较高的比率将反共振移向HOMO,而较低的比率则保持费米能量周围的反共振。共轭结构内电荷的积累降低了系数比,当环成员数达到7个时,等效能级由建设性转变为破坏性。本研究不仅为理解电荷开关的机制提供了机会,而且为利用电荷积累来操纵分子器件的电导开关铺平了道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Manipulation of quantum interference by charge accumulation in conjugated structures†

Manipulation of quantum interference by charge accumulation in conjugated structures†

Modulating charge accumulation in molecular structures to switch the quantum interference effect (QIE) presents a promising approach for manipulating conductance in molecular devices without altering the molecular structure, which is crucial for real molecular device applications. However, understanding the QIE switch by charging is still a challenge. In this study, we used carbon ring structures to induce and finely modulate the charge accumulation in cross-conjugated diphenylpenta-1,4-dien-3-one molecular junctions. Our measurements show that an approximate one-order magnitude conductance suppression was detected in the highly charged structure compared to the moderately charged structures by using the scanning tunneling microscopy break junction (STM-BJ) technique. The theoretical calculations revealed that the energy of anti-resonance in destructive QI was governed by the ratio of orbital coefficients between HOMO−1 and HOMO. Specifically, a higher ratio shifted the anti-resonance toward the HOMO, whereas a lower ratio maintained the anti-resonance around the Fermi energy. The charge accumulation within the conjugated structure decreased the coefficient ratio, thereby switching the QIE from constructive to destructive when the number of ring members reached seven. This study not only provides a chance to understand the mechanism of QIE switching by charge but also paves the way for utilizing the charge accumulation to manipulate the conductance switch in molecular devices.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Journal of Materials Chemistry C
Journal of Materials Chemistry C MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
10.80
自引率
6.20%
发文量
1468
期刊介绍: The Journal of Materials Chemistry is divided into three distinct sections, A, B, and C, each catering to specific applications of the materials under study: Journal of Materials Chemistry A focuses primarily on materials intended for applications in energy and sustainability. Journal of Materials Chemistry B specializes in materials designed for applications in biology and medicine. Journal of Materials Chemistry C is dedicated to materials suitable for applications in optical, magnetic, and electronic devices. Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive. Bioelectronics Conductors Detectors Dielectrics Displays Ferroelectrics Lasers LEDs Lighting Liquid crystals Memory Metamaterials Multiferroics Photonics Photovoltaics Semiconductors Sensors Single molecule conductors Spintronics Superconductors Thermoelectrics Topological insulators Transistors
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信