{"title":"用于余热回收系统和自旋电子学应用的惊人的半Heusler合金VIrX (X = As和Sb) -由DFT揭示","authors":"Hannah Jeniffer I. and Punithavelan N.","doi":"10.1039/D4TC03595J","DOIUrl":null,"url":null,"abstract":"<p >In this paper, we investigate the electronic, magnetic, mechanical, and thermoelectric properties of half Heusler compounds VIrAs and VIrSb by first principles calculations. The crystal structure of the half Heuslers was optimized and the lattice parameters of VIrX (X = As and Sb) were found to be 5.8754 and 6.1152 angstrom, respectively. The calculated elastic constants reveal the mechanical stability of the materials. Additionally, the phonon dispersion studies prove their dynamical stability. The GGA and TB-mBJ exchange correlational functionals were used to calculate the electronic properties. The density of states shows 100% spin polarization at the Fermi level. The half-metallic property is confirmed by the band gap observed in the spin-down channel, showing the semiconductor property and the metallic character in the spin-up channel. The half Heuslers were found to be ferromagnetic in the stable configuration. The major contribution to the ferromagnetic property was due to V atoms. Furthermore, the thermoelectric properties were also studied, and remarkable values of the figure of merit of 1.49 and 0.38 were obtained for VIrAs at 800 K and VIrSb at 600 K, respectively. Our findings reveal promising materials for thermoelectric and spintronic devices.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 20","pages":" 10152-10167"},"PeriodicalIF":5.1000,"publicationDate":"2025-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Prodigious half Heusler alloys VIrX (X = As and Sb) for waste heat recovery systems and spintronics applications – unravelled by DFT\",\"authors\":\"Hannah Jeniffer I. and Punithavelan N.\",\"doi\":\"10.1039/D4TC03595J\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >In this paper, we investigate the electronic, magnetic, mechanical, and thermoelectric properties of half Heusler compounds VIrAs and VIrSb by first principles calculations. The crystal structure of the half Heuslers was optimized and the lattice parameters of VIrX (X = As and Sb) were found to be 5.8754 and 6.1152 angstrom, respectively. The calculated elastic constants reveal the mechanical stability of the materials. Additionally, the phonon dispersion studies prove their dynamical stability. The GGA and TB-mBJ exchange correlational functionals were used to calculate the electronic properties. The density of states shows 100% spin polarization at the Fermi level. The half-metallic property is confirmed by the band gap observed in the spin-down channel, showing the semiconductor property and the metallic character in the spin-up channel. The half Heuslers were found to be ferromagnetic in the stable configuration. The major contribution to the ferromagnetic property was due to V atoms. Furthermore, the thermoelectric properties were also studied, and remarkable values of the figure of merit of 1.49 and 0.38 were obtained for VIrAs at 800 K and VIrSb at 600 K, respectively. Our findings reveal promising materials for thermoelectric and spintronic devices.</p>\",\"PeriodicalId\":84,\"journal\":{\"name\":\"Journal of Materials Chemistry C\",\"volume\":\" 20\",\"pages\":\" 10152-10167\"},\"PeriodicalIF\":5.1000,\"publicationDate\":\"2025-04-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Chemistry C\",\"FirstCategoryId\":\"1\",\"ListUrlMain\":\"https://pubs.rsc.org/en/content/articlelanding/2025/tc/d4tc03595j\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Chemistry C","FirstCategoryId":"1","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2025/tc/d4tc03595j","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Prodigious half Heusler alloys VIrX (X = As and Sb) for waste heat recovery systems and spintronics applications – unravelled by DFT
In this paper, we investigate the electronic, magnetic, mechanical, and thermoelectric properties of half Heusler compounds VIrAs and VIrSb by first principles calculations. The crystal structure of the half Heuslers was optimized and the lattice parameters of VIrX (X = As and Sb) were found to be 5.8754 and 6.1152 angstrom, respectively. The calculated elastic constants reveal the mechanical stability of the materials. Additionally, the phonon dispersion studies prove their dynamical stability. The GGA and TB-mBJ exchange correlational functionals were used to calculate the electronic properties. The density of states shows 100% spin polarization at the Fermi level. The half-metallic property is confirmed by the band gap observed in the spin-down channel, showing the semiconductor property and the metallic character in the spin-up channel. The half Heuslers were found to be ferromagnetic in the stable configuration. The major contribution to the ferromagnetic property was due to V atoms. Furthermore, the thermoelectric properties were also studied, and remarkable values of the figure of merit of 1.49 and 0.38 were obtained for VIrAs at 800 K and VIrSb at 600 K, respectively. Our findings reveal promising materials for thermoelectric and spintronic devices.
期刊介绍:
The Journal of Materials Chemistry is divided into three distinct sections, A, B, and C, each catering to specific applications of the materials under study:
Journal of Materials Chemistry A focuses primarily on materials intended for applications in energy and sustainability.
Journal of Materials Chemistry B specializes in materials designed for applications in biology and medicine.
Journal of Materials Chemistry C is dedicated to materials suitable for applications in optical, magnetic, and electronic devices.
Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive.
Bioelectronics
Conductors
Detectors
Dielectrics
Displays
Ferroelectrics
Lasers
LEDs
Lighting
Liquid crystals
Memory
Metamaterials
Multiferroics
Photonics
Photovoltaics
Semiconductors
Sensors
Single molecule conductors
Spintronics
Superconductors
Thermoelectrics
Topological insulators
Transistors