[1,2,4]三唑[1,5-a]吡啶基TADF化合物的给体和连锁变化理论设计与验证

IF 5.7 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Chetan Saini and K. R. Justin Thomas
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引用次数: 0

摘要

实现供体和受体强度之间的最佳平衡,再加上分子链的战略性变化,对于设计高效的热激活延迟荧光(TADF)材料至关重要。在这项研究中,我们将电子接受的[1,2,4]三唑[1,5-a]吡啶(TP)单元纳入探索高性能TADF发射器。通过系统的研究,我们阐明了分子结构和光物理性质之间的关系,通过调节供体强度和通过苯基间隔剂连接供体和受体单元。设计了18种具有不同给体取代基(Cz, DPA, DMAc, PTZ, PXZ和NPP)和键构型(邻位,元位,对位)的分子,并利用密度泛函理论(DFT)和时变DFT (TD-DFT)方法对其光物理性质进行了深入分析。评价了单重态-三重态能隙(ΔEST)、自旋-轨道耦合(SOC)、电荷转移(CT)指数、均方根偏差(RMSD)、重组能和激发态速率常数等关键参数来表征它们的发射特性。我们的研究结果表明,由于最高已占据分子轨道(HOMO)和最低未占据分子轨道(LUMO)之间的显著重叠,具有弱供体的分子表现出较大的ΔEST值。相比之下,具有中等至强供体的分子表现出较小的ΔEST值,这归因于增强的HOMO-LUMO分离和改善的CT特征。值得注意的是,具有元键和中等至强供体基团的分子表现出ΔEST值低于0.1 eV,中等SOC,较高的系统间交叉(kISC),反向系统间交叉(krISC)和辐射衰变(kr)率,使其成为TADF发射的理想候选者。该研究为合理设计用于OLED应用的高效tp基TADF材料提供了一个全面的框架,并为实验人员开发下一代TADF发射器提供了有价值的指导。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Theoretical design and validation of [1,2,4]triazolo[1,5-a]pyridine-based TADF emitters through donor and linkage variations†

Achieving an optimal balance between donor and acceptor strength, coupled with strategic variations in molecular linkage, is pivotal for designing efficient thermally activated delayed fluorescence (TADF) materials. In this study, we incorporate the electron-accepting [1,2,4]triazolo[1,5-a]pyridine (TP) unit to explore high-performance TADF emitters. Through a systematic investigation, we elucidate the relationship between molecular structure and photophysical properties by modulating donor strength and the linkage between donor and acceptor units via a phenyl spacer. Eighteen molecules featuring diverse donor substituents (Cz, DPA, DMAc, PTZ, PXZ, and NPP) and linkage configurations (ortho-, meta-, para-) were designed, and their photophysical properties were thoroughly analysed using density functional theory (DFT) and time-dependent DFT (TD-DFT) methods. Key parameters such as the singlet–triplet energy gap (ΔEST), spin–orbit coupling (SOC), charge transfer (CT) indices, root-mean-square deviation (RMSD), reorganization energies, and excited-state rate constants were evaluated to characterize their emission properties. Our results reveal that molecules with weak donors exhibit large ΔEST values due to significant overlap between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO). In contrast, molecules with moderate to strong donors demonstrate smaller ΔEST values, attributed to enhanced HOMO–LUMO separation and improved CT character. Notably, molecules with meta-linkages and moderate to strong donor groups exhibit ΔEST values below 0.1 eV, moderate SOC, and higher rates of intersystem crossing (kISC), reverse intersystem crossing (krISC), and radiative decay (kr), making them ideal candidates for TADF emission. This study provides a comprehensive framework for the rational design of highly efficient TP-based TADF materials for OLED applications and serves as a valuable guide for experimentalists in developing next-generation TADF emitters.

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来源期刊
Journal of Materials Chemistry C
Journal of Materials Chemistry C MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
10.80
自引率
6.20%
发文量
1468
期刊介绍: The Journal of Materials Chemistry is divided into three distinct sections, A, B, and C, each catering to specific applications of the materials under study: Journal of Materials Chemistry A focuses primarily on materials intended for applications in energy and sustainability. Journal of Materials Chemistry B specializes in materials designed for applications in biology and medicine. Journal of Materials Chemistry C is dedicated to materials suitable for applications in optical, magnetic, and electronic devices. Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive. Bioelectronics Conductors Detectors Dielectrics Displays Ferroelectrics Lasers LEDs Lighting Liquid crystals Memory Metamaterials Multiferroics Photonics Photovoltaics Semiconductors Sensors Single molecule conductors Spintronics Superconductors Thermoelectrics Topological insulators Transistors
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