{"title":"双向控相晶闸管设计优化的二维器件仿真","authors":"Vojtěch Brandštýl;Jan Vobecký","doi":"10.1109/TED.2025.3554134","DOIUrl":null,"url":null,"abstract":"The operation of 8.5-kV bidirectional phase control thyristor (BiPCT) is analyzed using calibrated device simulation (TCAD) with the goal of improving the tradeoff between the <sc>on</small>-state and turn-off losses. To cope with the specifics of the BiPCT in 2-D approximation, a special approach to turn the device from the forward blocking regime to the <sc>on</small>-state is introduced. The simulated characteristics of investigated design variants are compared with the ones measured on real devices produced on 100-mm silicon wafers. Both unirradiated and proton irradiated devices are discussed.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 5","pages":"2486-2491"},"PeriodicalIF":2.9000,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Two-Dimensional Device Simulation for the Design Optimization of a Bidirectional Phase Control Thyristor\",\"authors\":\"Vojtěch Brandštýl;Jan Vobecký\",\"doi\":\"10.1109/TED.2025.3554134\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The operation of 8.5-kV bidirectional phase control thyristor (BiPCT) is analyzed using calibrated device simulation (TCAD) with the goal of improving the tradeoff between the <sc>on</small>-state and turn-off losses. To cope with the specifics of the BiPCT in 2-D approximation, a special approach to turn the device from the forward blocking regime to the <sc>on</small>-state is introduced. The simulated characteristics of investigated design variants are compared with the ones measured on real devices produced on 100-mm silicon wafers. Both unirradiated and proton irradiated devices are discussed.\",\"PeriodicalId\":13092,\"journal\":{\"name\":\"IEEE Transactions on Electron Devices\",\"volume\":\"72 5\",\"pages\":\"2486-2491\"},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2025-04-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Electron Devices\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10948279/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10948279/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Two-Dimensional Device Simulation for the Design Optimization of a Bidirectional Phase Control Thyristor
The operation of 8.5-kV bidirectional phase control thyristor (BiPCT) is analyzed using calibrated device simulation (TCAD) with the goal of improving the tradeoff between the on-state and turn-off losses. To cope with the specifics of the BiPCT in 2-D approximation, a special approach to turn the device from the forward blocking regime to the on-state is introduced. The simulated characteristics of investigated design variants are compared with the ones measured on real devices produced on 100-mm silicon wafers. Both unirradiated and proton irradiated devices are discussed.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.